丝印代码：VHC08；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • Quad 2-Input AND Gate General The 74VHC08FT is an advanced high speed CMOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipati

74VHC CMOS logic IC series

Function：Quad 2-Input AND Gate\nNumber of Circuits：4\nAEC-Q100：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本

封装/外壳：14-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE AND 4CH 2-INP 14TSSOP 集成电路（IC） 门和反相器

QUAD 2-INPUT AND GATE

DESCRIPTION The 74VHC08 is an advanced high-speed CMOS QUAD 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which provides high noise immunity and stable output. ■ HIGH

QUAD 2-INPUT AND GATE

DESCRIPTION The 74VHC08 is an advanced high-speed CMOS QUAD 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which provides high noise immunity and stable output. ■ HIGH

Quad 2-Input AND Gate

Quad 2-Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of th

Quad 2-Input AND Gate

Quad 2-Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of th

Quad 2-Input AND Gate

Quad 2-Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of th