LOW VOLTAGE CMOS QUAD 2-INPUT AND GATE HIGH PERFORMANCE

DESCRIPTION The 74LVC08A is a low voltage CMOS QUAD 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for 1.65 to 3.6 VCC operations and low power and low noise applications. It can be interfaced to 5V signal environment for inpu

LOW VOLTAGE CMOS QUAD 2-INPUT AND GATE HIGH PERFORMANCE

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封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE AND 4CH 2-INP 14SO 集成电路（IC） 门和反相器

Quad 2-input AND gate

DESCRIPTION The 74LVC08A is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in a mixed 3.3 V/5 V environm

Quad 2-input AND gate

DESCRIPTION The 74LVC08A is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in a mixed 3.3 V/5 V environm

Quad 2-input AND gate

DESCRIPTION The 74LVC08A is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in a mixed 3.3 V/5 V environm

Quad 2-input AND gate

DESCRIPTION The 74LVC08A is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in a mixed 3.3 V/5 V environm

Quad 2-input AND gate

DESCRIPTION The 74LVC08A is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in a mixed 3.3 V/5 V environm