Quad 2-input NAND gate

Quad 2-input NAND gate

1. General description The 74HC00; 74HCT00 is a quad 2-input NAND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits • Wide supply voltage range from 2.0 to 6.0 V • CMOS low power dis

Quad 2-input NAND gate

丝印代码：14；Quad 2-input NAND gate

DESCRIPTION The 74HC00/74HCT00 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC00/74HCT00 provide the 2-input NAND function. FEATURES • Complies with JEDEC standard no. 8-1A •

Quad 2-input NAND gate

74HC CMOS logic IC series

Function：Quad 2-Input NAND Gate\nNumber of Circuits：4\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Power Dissipation PD 500 mW ;

Quad 2-input NAND gate

The 74HC00; 74HCT00 is a quad 2-input NAND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. • Input levels:• For 74HC00: CMOS level\n• For 74HCT00: TTL level\n\n• Complies with JEDEC standard no. 7A\n• ESD protection:• HBM JESD22-A114F exceeds 2000 V\n• MM JESD22-A115-A exceeds 200 V\n\n• Multiple package options\n• Specified from -40 °C to +85 °C and from -40 °C to +125 °C;

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE NAND 4CH 2-INP 14SOIC 集成电路（IC） 门和反相器

Quad 2-input NAND gate

文件：98.98 Kbytes Page：17 Pages

Quad 2-input NAND gate

丝印代码：14；Quad 2-input NAND gate

DESCRIPTION The 74HC00/74HCT00 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC00/74HCT00 provide the 2-input NAND function. FEATURES • Complies with JEDEC standard no. 8-1A •

Quad 2-input NAND gate

Quad 2-input NAND gate

Quad 2-input NAND gate

1. General description The 74HC00-Q100; 74HCT00-Q100 is a quad 2-input NAND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. This product has been qualified to the Automotive Electronics Council (AEC) standar

Quad 2-input NAND gate

1. General description The 74HC00-Q100; 74HCT00-Q100 is a quad 2-input NAND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. This product has been qualified to the Automotive Electronics Council (AEC) standar

Quad 2-input NAND gate

The 74HC00-Q100; 74HCT00-Q100 is a quad 2-input NAND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.\n This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is • Automotive product qualification in accordance with AEC-Q100 (Grade 1)• Specified from -40 °C to +85 °C and from -40 °C to +125 °C\n\n• Input levels:• For 74HC00-Q100: CMOS level\n• For 74HCT00-Q100: TTL level\n\n• Complies with JEDEC standard no. 7A\n• ESD protection:• MIL-STD-883, method 3015 ex;

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE NAND 4CH 2-INP 14SO 集成电路（IC） 门和反相器

Quad 2-input NAND gate

文件：98.98 Kbytes Page：17 Pages

Quad 2-input NAND gate

DESCRIPTION The 74HC00/74HCT00 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC00/74HCT00 provide the 2-input NAND function. FEATURES • Complies with JEDEC standard no. 8-1A •

QUAD 2-INPUT NAND GATE

DESCRIPTION The M74HCT00 is an high speed CMOS QUAD 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. ■ HIGH SPEED: tPD = 12ns (TYP.) at VCC = 4.5V ■ LOW PO

QUAD 2-INPUT NAND GATE

DESCRIPTION The M74HCT00 is an high speed CMOS QUAD 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. ■ HIGH SPEED: tPD = 12ns (TYP.) at VCC = 4.5V ■ LOW PO

High Speed CMOS Logic Quad 2-Input NAND Gate

文件：33.64 Kbytes Page：10 Pages

QUAD 2-INPUT NAND GATE

文件：231.75 Kbytes Page：9 Pages