3.3V CMOS 20-BIT BUFFER

FEATURES: • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 3.3V ± 0.3V, Normal Range, or VCC = 2.7V to 3.6V, Extended Range • CMOS power levels (0.4μ W typ. static) • Rail-to

3.3V CMOS 20-BIT BUFFER

文件：85.32 Kbytes Page：7 Pages

封装/外壳：56-TFSOP（0.240"，6.10mm 宽） 包装：卷带（TR） 描述：IC BUF NON-INVERT 3.6V 56TSSOP 集成电路（IC） 缓冲器，驱动器，接收器，收发器

3.3V CMOS 20-BIT BUFFER

FEATURES: • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 3.3V ± 0.3V, Normal Range, or VCC = 2.7V to 3.6V, Extended Range • CMOS power levels (0.4μ W typ. static) • Rail-to

封装/外壳：56-TFSOP（0.240"，6.10mm 宽） 包装：卷带（TR） 描述：IC BUF NON-INVERT 3.6V 56TSSOP 集成电路（IC） 缓冲器，驱动器，接收器，收发器

3.3V CMOS 20-BIT BUFFER

文件：85.32 Kbytes Page：7 Pages

3.3V CMOS 20-BIT BUFFER

FEATURES: • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 3.3V ± 0.3V, Normal Range, or VCC = 2.7V to 3.6V, Extended Range • CMOS power levels (0.4μ W typ. static) • Rail-to

3.3V CMOS 20-BIT BUFFER

FEATURES: • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 3.3V ± 0.3V, Normal Range, or VCC = 2.7V to 3.6V, Extended Range • CMOS power levels (0.4μ W typ. static) • Rail-to

3.3V CMOS 20-BIT BUFFER

FEATURES: • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 3.3V ± 0.3V, Normal Range, or VCC = 2.7V to 3.6V, Extended Range • CMOS power levels (0.4μ W typ. static) • Rail-to

3.3V CMOS 20-BIT BUFFER

文件：85.32 Kbytes Page：7 Pages