64-Bit Random Access Memory with 3-STATE Outputs

General Description The 74F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are 3-STATE and are in the high-impedance state whenever the Chip Select (CS) input is HIGH. The outputs are

64-Bit Random Access Memory with TRI-STATEE Outputs

文件：164.2 Kbytes Page：8 Pages

封装/外壳：16-DIP（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT） 描述：IC RAM 64B PARALLEL 16DIP 集成电路（IC） 存储器

64-Bit Random Access Memory with 3-STATE Outputs

General Description The 74F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are 3-STATE and are in the high-impedance state whenever the Chip Select (CS) input is HIGH. The outputs are

64-Bit Random Access Memory with TRI-STATEE Outputs

文件：164.2 Kbytes Page：8 Pages

64-bit TTL bipolar RAM, non-inverting 3-State

DESCRIPTION The 74F219A is a high speed, 64–bit RAM organized as a 16–word by 4–bit array. Address inputs are buffered to minimize loading and are fully decoded on chip. The outputs are in high impedance state whenever the chip enable (CE) is high. The outputs are active only in the READ mode (WE