Dual 2-input OR gate

General description The 74AHC2G/AHCT2G32 is a high-speed Si-gate CMOS device. This device provides two 2-input OR gates. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM EIA/JESD22-A114-A exceeds 2000 V ◆ MM EIA/JESD22-A115-A exceeds 200 V ◆

Dual 2-input NAND gate

Dual 2-input NAND gate

1. General description The 74AHC2G00; 74AHCT2G00 are high-speed Si-gate CMOS devices. They provide two 2-input NAND gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5

Dual 2-input NAND gate

1. General description The 74AHC2G00; 74AHCT2G00 are high-speed Si-gate CMOS devices. They provide two 2-input NAND gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5

Dual 2-input NAND gate

The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device

DESCRIPTION The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device. The 74AHC2G/AHCT2G00 provides the 2-input NAND gate function. FEATURES • Symmetrical output impedance • High noise immunity • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-

The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device

DESCRIPTION The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device. The 74AHC2G/AHCT2G00 provides the 2-input NAND gate function. FEATURES • Symmetrical output impedance • High noise immunity • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-

Dual 2-input NAND gate

Dual 2-input NAND gate

Dual 2-input AND gate

General description The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device. The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM JESD22-A114E exceeds 2000 V ◆ MM JESD22-A

Dual 2-input AND gate

1 General description The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device. The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates. 2 Features and benefits • Symmetrical output impedance • High noise immunity • ESD protection: • – HBM JESD22-A114E exceeds 2000 V – MM JESD22-A115

Dual 2-input AND gate

Dual 2-input AND gate

Dual 2-input AND gate

1 General description The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device. The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates. 2 Features and benefits • Symmetrical output impedance • High noise immunity • ESD protection: • – HBM JESD22-A114E exceeds 2000 V – MM JESD22-A115

Dual 2-input AND gate

General description The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device. The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM JESD22-A114E exceeds 2000 V ◆ MM JESD22-A

Dual 2-input AND gate

General description The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device. The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM JESD22-A114E exceeds 2000 V ◆ MM JESD22-A

Dual 2-input AND gate

Dual 2-input AND gate

1 General description The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device. The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates. 2 Features and benefits • Symmetrical output impedance • High noise immunity • ESD protection: • – HBM JESD22-A114E exceeds 2000 V – MM JESD22-A115

Dual 2-input AND gate

Dual 2-input AND gate

General description The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device. The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM JESD22-A114E exceeds 2000 V ◆ MM JESD22-A

Dual buffer/line driver; 3-state

Dual buffer/line driver; 3-state

1. General description The 74AHC2G125 and 74AHCT2G125 are high-speed Si-gate CMOS devices. They provide a dual non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (nOE). A HIGH at nOE causes the output to assume a high-impedance OFF

Dual buffer/line driver; 3-state

1. General description The 74AHC2G125 and 74AHCT2G125 are high-speed Si-gate CMOS devices. They provide a dual non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (nOE). A HIGH at nOE causes the output to assume a high-impedance OFF

Dual buffer/line driver; 3-state

Dual buffer/line driver; 3-state

1. General description The 74AHC2G125 and 74AHCT2G125 are high-speed Si-gate CMOS devices. They provide a dual non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (nOE). A HIGH at nOE causes the output to assume a high-impedance OFF

Dual buffer/line driver; 3-state

Dual buffer/line driver; 3-state

Dual buffer/line driver; 3-state

Dual buffer/line driver; 3-state

1. General description The 74AHC2G126 and 74AHCT2G126 are high-speed Si-gate CMOS devices. They provide a dual non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (nOE). A LOW at nOE causes the output to assume a high-impedance OFFst

Dual buffer/line driver; 3-state

1. General description The 74AHC2G126 and 74AHCT2G126 are high-speed Si-gate CMOS devices. They provide a dual non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (nOE). A LOW at nOE causes the output to assume a high-impedance OFFst

Dual buffer/line driver; 3-state

Dual buffer/line driver; 3-state

Dual buffer/line driver; 3-state

Dual buffer/line driver; 3-state

General description The 74AHC2G241; 74AHCT2G241 is a high-speed Si-gate CMOS device. The 74AHC2G241; 74AHCT2G241 is a dual non-inverting buffer/line driver with 3-state outputs. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM EIA/JESD22-A114-A ex

Dual buffer/line driver; 3-state

Dual buffer/line driver; 3-state

1. General description The 74AHC2G241; 74AHCT2G241 is a high-speed Si-gate CMOS device. The 74AHC2G241; 74AHCT2G241 is a dual non-inverting buffer/line driver with 3-state outputs. The 3-state outputs are controlled by the output enable inputs 1OE and 2OE. A HIGH level at pin 1OE causes output

Dual buffer/line driver; 3-state

1. General description The 74AHC2G241; 74AHCT2G241 is a high-speed Si-gate CMOS device. The 74AHC2G241; 74AHCT2G241 is a dual non-inverting buffer/line driver with 3-state outputs. The 3-state outputs are controlled by the output enable inputs 1OE and 2OE. A HIGH level at pin 1OE causes output

Dual buffer/line driver; 3-state

General description The 74AHC2G241; 74AHCT2G241 is a high-speed Si-gate CMOS device. The 74AHC2G241; 74AHCT2G241 is a dual non-inverting buffer/line driver with 3-state outputs. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM EIA/JESD22-A114-A ex

Dual buffer/line driver; 3-state

Dual buffer/line driver; 3-state

General description The 74AHC2G241-Q100; 74AHCT2G241-Q100 is a high-speed Si-gate CMOS device. The 74AHC2G241-Q100; 74AHCT2G241-Q100 is a dual non-inverting buffer/line driver with 3- state outputs. Features and benefits • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

Dual buffer/line driver; 3-state

Dual buffer/line driver; 3-state

General description The 74AHC2G241; 74AHCT2G241 is a high-speed Si-gate CMOS device. The 74AHC2G241; 74AHCT2G241 is a dual non-inverting buffer/line driver with 3-state outputs. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM EIA/JESD22-A114-A ex

Dual buffer/line driver; 3-state

Dual buffer/line driver; 3-state

General description The 74AHC2G241-Q100; 74AHCT2G241-Q100 is a high-speed Si-gate CMOS device. The 74AHC2G241-Q100; 74AHCT2G241-Q100 is a dual non-inverting buffer/line driver with 3- state outputs. Features and benefits • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

Dual 2-input OR gate

1. General description The 74AHC2G32; 74AHCT2G32 are high-speed Si-gate CMOS devices. They provide two 2-input OR gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V

Dual 2-input OR gate

General description The 74AHC2G/AHCT2G32 is a high-speed Si-gate CMOS device. This device provides two 2-input OR gates. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM EIA/JESD22-A114-A exceeds 2000 V ◆ MM EIA/JESD22-A115-A exceeds 200 V ◆

Dual 2-input OR gate

General description The 74AHC2G/AHCT2G32 is a high-speed Si-gate CMOS device. This device provides two 2-input OR gates. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM EIA/JESD22-A114-A exceeds 2000 V ◆ MM EIA/JESD22-A115-A exceeds 200 V ◆

Dual 2-input OR gate

1. General description The 74AHC2G32; 74AHCT2G32 are high-speed Si-gate CMOS devices. They provide two 2-input OR gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V

Dual 2-input OR gate

1. General description The 74AHC2G32; 74AHCT2G32 are high-speed Si-gate CMOS devices. They provide two 2-input OR gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V

Dual 2-input OR gate

1. General description The 74AHC2G32; 74AHCT2G32 are high-speed Si-gate CMOS devices. They provide two 2-input OR gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V

Dual 2-input OR gate

General description The 74AHC2G/AHCT2G32 is a high-speed Si-gate CMOS device. This device provides two 2-input OR gates. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM EIA/JESD22-A114-A exceeds 2000 V ◆ MM EIA/JESD22-A115-A exceeds 200 V ◆

Dual 2-input OR gate

1. General description The 74AHC2G32; 74AHCT2G32 are high-speed Si-gate CMOS devices. They provide two 2-input OR gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V

Dual 2-input OR gate

1. General description The 74AHC2G32; 74AHCT2G32 are high-speed Si-gate CMOS devices. They provide two 2-input OR gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V

Dual 2-input NAND gate

文件：211.57 Kbytes Page：11 Pages

封装/外壳：8-VFSOP（0.091"，2.30mm 宽） 包装：卷带（TR） 描述：IC GATE NAND 2CH 2-INP 8VSSOP 集成电路（IC） 门和反相器

Dual 2-input NAND gate

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：卷带（TR） 描述：IC GATE NAND 2CH 2-INP 8TSSOP 集成电路（IC） 门和反相器

Automotive logic

Dual 2-input NAND gate

文件：211.57 Kbytes Page：11 Pages

Automotive product qualification in accordance with AEC-Q100

文件：197.43 Kbytes Page：14 Pages