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74AHCT2G价格

参考价格:¥1.4982

型号:74AHCT2G00GD,125 品牌:NXP 备注:这里有74AHCT2G多少钱,2026年最近7天走势,今日出价,今日竞价,74AHCT2G批发/采购报价,74AHCT2G行情走势销售排行榜,74AHCT2G报价。
型号 功能描述 生产厂家 企业 LOGO 操作
74AHCT2G

Dual 2-input OR gate

General description The 74AHC2G/AHCT2G32 is a high-speed Si-gate CMOS device. This device provides two 2-input OR gates. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM EIA/JESD22-A114-A exceeds 2000 V ◆ MM EIA/JESD22-A115-A exceeds 200 V ◆

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Dual 2-input NAND gate

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Dual 2-input NAND gate

1. General description The 74AHC2G00; 74AHCT2G00 are high-speed Si-gate CMOS devices. They provide two 2-input NAND gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5

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丝印代码:C00;Dual 2-input NAND gate

1. General description The 74AHC2G00; 74AHCT2G00 are high-speed Si-gate CMOS devices. They provide two 2-input NAND gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5

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Dual 2-input NAND gate

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The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device

DESCRIPTION The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device. The 74AHC2G/AHCT2G00 provides the 2-input NAND gate function. FEATURES • Symmetrical output impedance • High noise immunity • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-

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The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device

DESCRIPTION The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device. The 74AHC2G/AHCT2G00 provides the 2-input NAND gate function. FEATURES • Symmetrical output impedance • High noise immunity • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-

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Dual 2-input NAND gate

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Dual 2-input NAND gate

The 74AHC2G00; 74AHCT2G00 are high-speed Si-gate CMOS devices. They provide two 2-input NAND gates.\n The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.\n The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.

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Dual 2-input NAND gate

The 74AHC2G00; 74AHCT2G00 are high-speed Si-gate CMOS devices. They provide two 2-input NAND gates.\n The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.\n The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.

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Dual 2-input NAND gate

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Dual 2-input AND gate

General description The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device. The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM JESD22-A114E exceeds 2000 V ◆ MM JESD22-A

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Dual 2-input AND gate

1 General description The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device. The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates. 2 Features and benefits • Symmetrical output impedance • High noise immunity • ESD protection: • – HBM JESD22-A114E exceeds 2000 V – MM JESD22-A115

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Dual 2-input AND gate

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Dual 2-input AND gate

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丝印代码:C08;Dual 2-input AND gate

1 General description The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device. The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates. 2 Features and benefits • Symmetrical output impedance • High noise immunity • ESD protection: • – HBM JESD22-A114E exceeds 2000 V – MM JESD22-A115

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Dual 2-input AND gate

General description The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device. The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM JESD22-A114E exceeds 2000 V ◆ MM JESD22-A

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Dual 2-input AND gate

General description The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device. The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM JESD22-A114E exceeds 2000 V ◆ MM JESD22-A

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Dual 2-input AND gate

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丝印代码:C08;Dual 2-input AND gate

1 General description The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device. The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates. 2 Features and benefits • Symmetrical output impedance • High noise immunity • ESD protection: • – HBM JESD22-A114E exceeds 2000 V – MM JESD22-A115

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Dual 2-input AND gate

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Dual 2-input AND gate

General description The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device. The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM JESD22-A114E exceeds 2000 V ◆ MM JESD22-A

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Dual buffer/line driver; 3-state

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Dual buffer/line driver; 3-state

1. General description The 74AHC2G125 and 74AHCT2G125 are high-speed Si-gate CMOS devices. They provide a dual non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (nOE). A HIGH at nOE causes the output to assume a high-impedance OFF

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丝印代码:C25;Dual buffer/line driver; 3-state

1. General description The 74AHC2G125 and 74AHCT2G125 are high-speed Si-gate CMOS devices. They provide a dual non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (nOE). A HIGH at nOE causes the output to assume a high-impedance OFF

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丝印代码:C25;Dual buffer/line driver; 3-state

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丝印代码:C25;Dual buffer/line driver; 3-state

1. General description The 74AHC2G125 and 74AHCT2G125 are high-speed Si-gate CMOS devices. They provide a dual non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (nOE). A HIGH at nOE causes the output to assume a high-impedance OFF

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丝印代码:C25;Dual buffer/line driver; 3-state

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丝印代码:C25;Dual buffer/line driver; 3-state

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Dual buffer/line driver; 3-state

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Dual buffer/line driver; 3-state

1. General description The 74AHC2G126 and 74AHCT2G126 are high-speed Si-gate CMOS devices. They provide a dual non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (nOE). A LOW at nOE causes the output to assume a high-impedance OFFst

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丝印代码:C26;Dual buffer/line driver; 3-state

1. General description The 74AHC2G126 and 74AHCT2G126 are high-speed Si-gate CMOS devices. They provide a dual non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (nOE). A LOW at nOE causes the output to assume a high-impedance OFFst

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Dual buffer/line driver; 3-state

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Dual buffer/line driver; 3-state

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Dual buffer/line driver; 3-state

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Dual buffer/line driver; 3-state

General description The 74AHC2G241; 74AHCT2G241 is a high-speed Si-gate CMOS device. The 74AHC2G241; 74AHCT2G241 is a dual non-inverting buffer/line driver with 3-state outputs. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM EIA/JESD22-A114-A ex

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Dual buffer/line driver; 3-state

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Dual buffer/line driver; 3-state

1. General description The 74AHC2G241; 74AHCT2G241 is a high-speed Si-gate CMOS device. The 74AHC2G241; 74AHCT2G241 is a dual non-inverting buffer/line driver with 3-state outputs. The 3-state outputs are controlled by the output enable inputs 1OE and 2OE. A HIGH level at pin 1OE causes output

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丝印代码:C41;Dual buffer/line driver; 3-state

1. General description The 74AHC2G241; 74AHCT2G241 is a high-speed Si-gate CMOS device. The 74AHC2G241; 74AHCT2G241 is a dual non-inverting buffer/line driver with 3-state outputs. The 3-state outputs are controlled by the output enable inputs 1OE and 2OE. A HIGH level at pin 1OE causes output

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Dual buffer/line driver; 3-state

General description The 74AHC2G241; 74AHCT2G241 is a high-speed Si-gate CMOS device. The 74AHC2G241; 74AHCT2G241 is a dual non-inverting buffer/line driver with 3-state outputs. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM EIA/JESD22-A114-A ex

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Dual buffer/line driver; 3-state

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丝印代码:c41;Dual buffer/line driver; 3-state

General description The 74AHC2G241-Q100; 74AHCT2G241-Q100 is a high-speed Si-gate CMOS device. The 74AHC2G241-Q100; 74AHCT2G241-Q100 is a dual non-inverting buffer/line driver with 3- state outputs. Features and benefits • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

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Dual buffer/line driver; 3-state

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Dual buffer/line driver; 3-state

General description The 74AHC2G241; 74AHCT2G241 is a high-speed Si-gate CMOS device. The 74AHC2G241; 74AHCT2G241 is a dual non-inverting buffer/line driver with 3-state outputs. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM EIA/JESD22-A114-A ex

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Dual buffer/line driver; 3-state

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Dual buffer/line driver; 3-state

General description The 74AHC2G241-Q100; 74AHCT2G241-Q100 is a high-speed Si-gate CMOS device. The 74AHC2G241-Q100; 74AHCT2G241-Q100 is a dual non-inverting buffer/line driver with 3- state outputs. Features and benefits • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

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Dual 2-input OR gate

1. General description The 74AHC2G32; 74AHCT2G32 are high-speed Si-gate CMOS devices. They provide two 2-input OR gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V

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Dual 2-input OR gate

General description The 74AHC2G/AHCT2G32 is a high-speed Si-gate CMOS device. This device provides two 2-input OR gates. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM EIA/JESD22-A114-A exceeds 2000 V ◆ MM EIA/JESD22-A115-A exceeds 200 V ◆

PHILIPS

飞利浦

Dual 2-input OR gate

General description The 74AHC2G/AHCT2G32 is a high-speed Si-gate CMOS device. This device provides two 2-input OR gates. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM EIA/JESD22-A114-A exceeds 2000 V ◆ MM EIA/JESD22-A115-A exceeds 200 V ◆

PHILIPS

飞利浦

丝印代码:C32;Dual 2-input OR gate

1. General description The 74AHC2G32; 74AHCT2G32 are high-speed Si-gate CMOS devices. They provide two 2-input OR gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V

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安世

丝印代码:C32;Dual 2-input OR gate

1. General description The 74AHC2G32; 74AHCT2G32 are high-speed Si-gate CMOS devices. They provide two 2-input OR gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V

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安世

丝印代码:C32;Dual 2-input OR gate

1. General description The 74AHC2G32; 74AHCT2G32 are high-speed Si-gate CMOS devices. They provide two 2-input OR gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V

NEXPERIA

安世

Dual 2-input OR gate

General description The 74AHC2G/AHCT2G32 is a high-speed Si-gate CMOS device. This device provides two 2-input OR gates. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM EIA/JESD22-A114-A exceeds 2000 V ◆ MM EIA/JESD22-A115-A exceeds 200 V ◆

PHILIPS

飞利浦

丝印代码:C32;Dual 2-input OR gate

1. General description The 74AHC2G32; 74AHCT2G32 are high-speed Si-gate CMOS devices. They provide two 2-input OR gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V

NEXPERIA

安世

Dual 2-input OR gate

1. General description The 74AHC2G32; 74AHCT2G32 are high-speed Si-gate CMOS devices. They provide two 2-input OR gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V

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丝印代码:c00;Dual 2-input NAND gate

文件:211.57 Kbytes Page:11 Pages

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封装/外壳:8-VFSOP(0.091",2.30mm 宽) 包装:卷带(TR) 描述:IC GATE NAND 2CH 2-INP 8VSSOP 集成电路(IC) 门和反相器

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封装/外壳:8-TSSOP,8-MSOP(0.118",3.00mm 宽) 包装:卷带(TR) 描述:IC GATE NAND 2CH 2-INP 8TSSOP 集成电路(IC) 门和反相器

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Automotive logic

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Dual 2-input NAND gate

文件:211.57 Kbytes Page:11 Pages

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74AHCT2G产品属性

  • 类型

    描述

  • VCC (V):

    4.5 - 5.5

  • Logic switching levels:

    TTL

  • Output drive capability (mA):

    ± 8

  • tpd (ns):

    3.6

  • fmax (MHz):

    60

  • Nr of bits:

    2

  • Power dissipation considerations:

    low

  • Tamb (°C):

    -40~125

  • Rth(j-a) (K/W):

    205

  • Ψth(j-top) (K/W):

    35.8

  • Rth(j-c) (K/W):

    116

  • Package name:

    VSSOP8

更新时间:2026-8-4 13:45:00
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TI/德州仪器
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23+
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TI/德州仪器
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全新原装自家现货优势!
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标准封装
94048
全新原装正品/价格优惠/质量保障

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