CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

Features • High speed: tpd = 3.6 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28 VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission lines. • Balanced propagation dela

CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

Features • High speed: tpd = 3.6 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28 VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission lines. • Balanced propagation dela

CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

Features • High speed: tpd = 3.6 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28 VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission lines. • Balanced propagation dela

Quad 2-Input Data Selector/Multiplexer with 3-State Outputs High-Speed Silicon-Gate CMOS

文件：278.82 Kbytes Page：6 Pages

Quad 2-Input Data Selector/Multiplexer with 3-State Outputs High-Speed Silicon-Gate CMOS

文件：278.82 Kbytes Page：6 Pages