WE-PLC SMT Transformer

General Information: Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

WE-PLC SMT Transformer

General Information: Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

WE-BMS SMT transformer

General Information: Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

WE-BMS SMT transformer

General Information: Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

WE-BMS SMT transformer

General Information: Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

包装：散装 描述：B120,14\ 标签，标志，护栏，标识 标志，铭牌，招贴

包装：散装 描述：B120,14\ 标签，标志，护栏，标识 标志，铭牌，招贴

Transformer for Battery Management Systems

文件：93.88 Kbytes Page：1 Pages

Transformer for Battery Management Systems

文件：93.61 Kbytes Page：1 Pages

脉冲变压器

Signal Transformers

Transformer for Battery Management Systems

文件：85.81 Kbytes Page：1 Pages

Signal Transformers

Transformer for Battery Management Systems

文件：96.22 Kbytes Page：1 Pages

Transformer for Battery Management Systems

文件：95.83 Kbytes Page：1 Pages

Transformer for Battery Management Systems

文件：96.75 Kbytes Page：1 Pages

6G Active Re-driver with Linear Equalization for HDMI 2.0

Features • Built-in Re-driver with CTLE − Integrated Re-driver for HDMI2.0 up to 6Gbps − Supports DP++, HDMI Source applications − Loss compensation to recover up to -10dB channel loss @6Gbps • CTLE, Flat Gain and Swing configurations − Four-lane configurations set by pin strapping. − Indep

HEXFET Power MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

HEXFET Power MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

HEXFET

Power MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

HEXFET Power MOSFET

文件：68.35 Kbytes Page：2 Pages

4-BIT SHIFT REGISTERS