HiPerFET Power MOSFETs Q-CLASS

Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features ▪ IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Rated for unclamped Inductiv

HiPerFET Power MOSFETs Q-CLASS

Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features ▪ IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Rated for unclamped Inductiv

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • JEDEC TO-264 AA, epoxy meet UL94V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilic

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg , High dv/dt Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive -faster switching • Unclamped Inductive Switching (UIS) rated • Low RDS (on) • Fast intrinsic diode • International standar

HiPerFET Power MOSFETs Q-CLASS

Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features ▪ IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Rated for unclamped Inductiv