包装：散装 描述：SMOCK, STATSHIELD, JACKET, CUFFS 静电控制，防静电，ESD，无尘室产品 静电控制，防静电服

包装：散装 描述：B736 2X12 BLK/YEL 25/RL PM-TO-GO 标签，标志，护栏，标识 标签，贴纸，贴标 - 预印

High- and Low-Side, Gate-Drive IC

Description The FAN73901 is a monolithic high- and low-side gate drive IC, which can drive high-speed MOSFETs and IGBTs that operate up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. Features ■

High- and Low-Side, Gate-Drive IC

Description The FAN73901 is a monolithic high- and low-side gate drive IC, which can drive high-speed MOSFETs and IGBTs that operate up to +600 V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. Features ■

High- and Low-Side, Gate-Drive IC

Description The FAN73901 is a monolithic high- and low-side gate drive IC, which can drive high-speed MOSFETs and IGBTs that operate up to +600 V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. Features ■

High- and Low-Side, Gate-Drive IC

Description The FAN73901 is a monolithic high- and low-side gate drive IC, which can drive high-speed MOSFETs and IGBTs that operate up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. Features ■

High- and Low-Side, Gate-Drive IC

Description The FAN73901 is a monolithic high- and low-side gate drive IC, which can drive high-speed MOSFETs and IGBTs that operate up to +600 V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. Features ■