位置：首页 > IC中文资料 > 71V65903S80PFGI
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
71V65903S80PFGI | 256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
71V65903S80PFGI | 封装/外壳：100-LQFP 包装：卷带（TR） 描述：IC SRAM 9MBIT PARALLEL 100TQFP 集成电路（IC） 存储器 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
封装/外壳：100-LQFP 包装：卷带（TR） 描述：IC SRAM 9MBIT PARALLEL 100TQFP 集成电路（IC） 存储器 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
RoHSCompliant |
Tray |
72 |
neworiginal |
|||
IDT, Integrated Device Technol |
21+ |
NA |
11200 |
正品专卖,进口原装深圳现货 |
|||
IDT, Integrated Device Technol |
21+ |
100-TQFP(14x14) |
56200 |
一级代理/放心采购 |
|||
RENESAS(瑞萨)/IDT |
23+ |
TQFP100(14x20) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
RENESAS(瑞萨)/IDT |
2021+ |
TQFP-100(14x14) |
499 |
||||
RENESAS(瑞萨) |
23+ |
100-TQFP (20.00L X 14.00W X 0. |
10000 |
全新、原装 |
|||
IDT |
22+ |
原厂原装 |
100000 |
||||
IDT, Integrated Device Technol |
21+ |
63-VFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
RENESAS(瑞萨)/IDT |
23+ |
TQFP100(14x20) |
6000 |
||||
IDT |
23+ |
NA |
10726 |
专做原装正品,假一罚百! |
71V65903S80PFGI芯片相关品牌
71V65903S80PFGI规格书下载地址
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71V65903S80PFGI数据表相关新闻
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定位:TopView If-順向電流:20mA 封裝:Reel 品牌:Everlight 安裝風格:SMD/SMT 濕度敏感:Yes 產品類型:LED-Standard 原廠包裝數量:3000 子類別:LEDs
2019-11-4
DdatasheetPDF页码索引
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