位置:首页 > IC中文资料 > 71V424S10PHGI
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
71V424S10PHGI | 3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | ||
71V424S10PHGI | 3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | ||
71V424S10PHGI | 封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC SRAM 4MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | ||
3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | |||
封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC SRAM 4MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | |||
3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 |
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RENESAS(瑞萨)/IDT |
2021+ |
TSOPII-44 |
499 |
||||
RENESAS(瑞萨)/IDT |
2117+ |
TSOPII-44 |
315000 |
135个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
Renesas |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
RENESAS/瑞萨 |
23+ |
36-BSOJ |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
IDT/Integrated Device Technolo |
21+ |
36SOJ |
9 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IDT |
2046+ |
9852 |
只做原装正品现货!或订货假一赔十! |
||||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
|||
IDT |
22+ |
NA |
1186 |
加我QQ或微信咨询更多详细信息, |
|||
IDT |
22+ |
36SOJ |
25000 |
原装现货,价格优惠,假一罚十 |
|||
Renesas Electronics America In |
21+ |
NA |
11200 |
正品专卖,进口原装深圳现货 |
71V424S10PHGI规格书下载地址
71V424S10PHGI参数引脚图相关
- 7号电池
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- 72-007
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- 72006
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- 72002E
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- 72002
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- 72001NH
- 72001E
- 72-001
- 72001
- 71VR1
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- 71RIA
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- 71RA80
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- 71RA50
- 71RA160
71V424S10PHGI数据表相关新闻
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定位:TopView If-順向電流:20mA 封裝:Reel 品牌:Everlight 安裝風格:SMD/SMT 濕度敏感:Yes 產品類型:LED-Standard 原廠包裝數量:3000 子類別:LEDs
2019-11-4
DdatasheetPDF页码索引
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