型号 功能描述 生产厂家 企业 LOGO 操作
71T75802S150BG

512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W

RENESAS

瑞萨

71T75802S150BG

2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

文件:260.17 Kbytes Page:26 Pages

IDT

71T75802S150BG

封装/外壳:119-BGA 包装:托盘 描述:IC SRAM 18MBIT PARALLEL 119PBGA 集成电路(IC) 存储器

ETC

知名厂家

512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W

RENESAS

瑞萨

512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W

RENESAS

瑞萨

512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W

RENESAS

瑞萨

512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W

RENESAS

瑞萨

512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W

RENESAS

瑞萨

512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W

RENESAS

瑞萨

512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W

RENESAS

瑞萨

2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

文件:260.17 Kbytes Page:26 Pages

IDT

2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

文件:260.17 Kbytes Page:26 Pages

IDT

封装/外壳:119-BGA 包装:托盘 描述:IC SRAM 18MBIT PARALLEL 119PBGA 集成电路(IC) 存储器

ETC

知名厂家

2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

文件:260.17 Kbytes Page:26 Pages

IDT

2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

文件:260.17 Kbytes Page:26 Pages

IDT

2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

文件:260.17 Kbytes Page:26 Pages

IDT

2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

文件:260.17 Kbytes Page:26 Pages

IDT

2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

文件:260.17 Kbytes Page:26 Pages

IDT

更新时间:2025-11-7 10:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT, Integrated Device Technol
24+
119-PBGA(14x22)
56200
一级代理/放心采购
RENESAS(瑞萨)/IDT
24+
PBGA119(14x22)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
IDT
2023+
BGA
6893
十五年行业诚信经营,专注全新正品
IDT
2450+
BGA
9850
只做原装正品现货或订货假一赔十!
Renesas Electronics America In
25+
119-BGA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
Renesas
25+
电联咨询
7800
公司现货,提供拆样技术支持
IDT
23+
BGA
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
IDT, Integrated Device Technol
21+
165-TBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
Renesas
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
RENESAS(瑞萨)/IDT
24+
PBGA-119(14x22)
16508
原装正品现货支持实单

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