Common Mode EMI Inductors

[J.W.Miller] Special Features •Reduce conductive EMI emission •High current capacity •High impedance at low frequency •Dielectric strength 3750VRMS •Coil wound on VW-1 rated plastic cased ferrite core •Operating temperature -55 to +105°C

3.3V SURFACE MOUNT 5x3.2mm LVCMOS CLOCK OSCILLATOR

文件：168.49 Kbytes Page：2 Pages

包装：散装 描述：CARRIER BD 原型开发，制造品 配件

封装/外壳：垂直式，无底座，2 PC 引脚 包装：托盘 描述：CMC 2MH 2A 2LN TH 滤波器 共模扼流圈

丝印代码：711310E；N-channel 100 V, 113 mΩ standard level MOSFET in LFPAK56

1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

Common Mode EMI Chokes

Special Features • Dual winding • Low radiation • High current capacity • High inductance • Dielectric strength 1000Vrms • Mounted on VW-1 rated header • Fixed pins for easy PCB insertion • Operating temperature -55 to +105°C

Common Mode EMI Chokes

Special Features • Reduce conductive EMI emission • High current capacity • High impedance at low frequency • Dielectric strength 3750 Vrms • Coil wound on UL 94V-0 rated plastic cased ferrite core • Operating temperature -55 to +105 °C

Common Mode EMI Chokes

Special Features • Reduce conductive EMI emission • High current capacity • High impedance at low frequency • Dielectric strength 3750 Vrms • Coil wound on UL 94V-0 rated plastic cased ferrite core • Operating temperature -55 to +105 °C

MachFlex™, 61G C #18 Str BC, PVC-NYL Ins, TPE Jkt, 1000V WTTC, 600V TC-ER

Product Description MachFlex™ for High Flex, 6+1G Conductor 18AWG (105x38) Bare Copper, PVC-NYL Insulation, TPE Outer Jacket, 1000V WTTC, 600V TC-ER

MachFlex™, 61G C #18 Str BC, PVC-NYL Ins, TPE Jkt, 1000V WTTC, 600V TC-ER

Product Description MachFlex™ for High Flex, 6+1G Conductor 18AWG (105x38) Bare Copper, PVC-NYL Insulation, TPE Outer Jacket, 1000V WTTC, 600V TC-ER

MachFlex™, 61G C #18 Str BC, PVC-NYL Ins, TPE Jkt, 1000V WTTC, 600V TC-ER

Product Description MachFlex™ for High Flex, 6+1G Conductor 18AWG (105x38) Bare Copper, PVC-NYL Insulation, TPE Outer Jacket, 1000V WTTC, 600V TC-ER

MachFlex™, 61G C #18 Str BC, PVC-NYL Ins, TPE Jkt, 1000V WTTC, 600V TC-ER

Product Description MachFlex™ for High Flex, 6+1G Conductor 18AWG (105x38) Bare Copper, PVC-NYL Insulation, TPE Outer Jacket, 1000V WTTC, 600V TC-ER

连接器附件

3.3V SURFACE MOUNT 5x3.2mm LVCMOS CLOCK OSCILLATOR

文件：168.49 Kbytes Page：2 Pages

共模滤波器

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

6, 8-PIN DIP, 350 mA CONTINUOUS LOAD CURRENT 1-ch, 2-ch Optical Coupled MOS FET

DESCRIPTION The PS7113-1A, -2A and PS7113L-1A, -2A are solid state relays containing GaAs LEDs on the light emitting side (input side) and MOS FETs on the output side. They are suitable for analog signal control because of their low offset and high linearity. The PS7113L-1A, -2A have a surface