Medium Performance Compact EMI Power Inlet Filter

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1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP

Features  Infineon Thin Film SOI technology  Floating channel designed for bootstrap operation  Fully operational to +1200 V  Tolerant to negative transient voltage up to -100V (pulse widths up to 700ns)  Gate drive supply range from 12 V to 20 V  25 V VCC voltage supply (maximum)  3

1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP

Features  Infineon Thin Film SOI technology  Floating channel designed for bootstrap operation  Fully operational to +1200 V  Tolerant to negative transient voltage up to -100V (pulse widths up to 700ns)  Gate drive supply range from 12 V to 20 V  25 V VCC voltage supply (maximum)  3

1200 V、0.65 A 三相栅极驱动器，集成自举二极管和过流保护，采用 DSO-24 封装

EiceDRIVER ™ 1200 V 三相栅极驱动器，采用 DSO-24 引线封装，典型拉电流为 0.35 A，灌电流为 0.65 A。这款采用我们的 SOI 技术的高压、高速驱动器具有三个独立的高端和低端参考输出通道，并集成了过流保护等保护功能，具有快速准确的故障报告、直通保护和欠压锁定保护。 • 1200-V 薄膜 SOI 技术\n • 集成。超快速自举二极管\n • 可耐受负电压。瞬态电压。\n• 输出拉/灌电流 +0.35 A/-0.65 A\n • 过流保护\n • 集成死区保护\n • 直通保护\n • 集成输入滤波器\n • 独立欠压锁定\n • 多种故障功能\n • 匹配的道具。延迟所有通道。\n• 3.3，5、& 15 V 输入逻辑兼容。;

适用于 IGBT/SiC 模块和分立器件的 1200 V 三相栅极驱动器，带有集成自举二极管、过流保护和更严格的 UVLO 保护

\n优势:\n• 3 Phase gate drive with Integrated bootstrap diode in tiny foot print provides reduced BOM cost, smaller PCB space at lower cost with simpler design\n• Optimized gate driver solution with design flexibility for IGBT/SiC based PIM, discrete switch\n• 100 V negative VS increased reliability /;

1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP

Features  Infineon Thin-Film-SOI technology  Fully operational to +1200 V  Optimized for IGBT (insulated gate bipolar transistor) / SiC(Silicon carbide) MOSFET  Integrated Ultra‐fast Bootstrap Diode  Floating channel designed for bootstrap operation  Output source/sink current capabil

1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP

Features  Infineon Thin-Film-SOI technology  Fully operational to +1200 V  Optimized for IGBT (insulated gate bipolar transistor) / SiC(Silicon carbide) MOSFET  Integrated Ultra‐fast Bootstrap Diode  Floating channel designed for bootstrap operation  Output source/sink current capabil

160 V pre-regulated three phase SOI gate driver with integrated charge pump, current sense amplifier, over-current protection, and bootstrap diodes

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated power management unit (PMU) with; o Linear pre-regulator to enable wide input VIN range o Integrated charge pump for stable VCC  Integrated current sense amplifier (CSA) with se

160 V pre-regulated three phase SOI gate driver with integrated charge pump, current sense amplifier, over-current protection, and bootstrap diodes

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated power management unit (PMU) with; o Linear pre-regulator to enable wide input VIN range o Integrated charge pump for stable VCC  Integrated current sense amplifier (CSA) with se

1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP

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门驱动器

封装/外壳：28-SOIC（0.295"，7.50mm 宽），24 引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：1200V THREE PHASE DRIVER 集成电路（IC） 栅极驱动器

6.5Vdc ??13.8 Vdc Input 0.6Vdc ??1.52Vdc, 135 A/20 A Output

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