Medium Performance Compact EMI Power Inlet Filter

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1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP

Features  Infineon Thin Film SOI technology  Floating channel designed for bootstrap operation  Fully operational to +1200 V  Tolerant to negative transient voltage up to -100V (pulse widths up to 700ns)  Gate drive supply range from 12 V to 20 V  25 V VCC voltage supply (maximum)  3

1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP

Features  Infineon Thin Film SOI technology  Floating channel designed for bootstrap operation  Fully operational to +1200 V  Tolerant to negative transient voltage up to -100V (pulse widths up to 700ns)  Gate drive supply range from 12 V to 20 V  25 V VCC voltage supply (maximum)  3

1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP

Features  Infineon Thin-Film-SOI technology  Fully operational to +1200 V  Optimized for IGBT (insulated gate bipolar transistor) / SiC(Silicon carbide) MOSFET  Integrated Ultra‐fast Bootstrap Diode  Floating channel designed for bootstrap operation  Output source/sink current capabil

1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP

Features  Infineon Thin-Film-SOI technology  Fully operational to +1200 V  Optimized for IGBT (insulated gate bipolar transistor) / SiC(Silicon carbide) MOSFET  Integrated Ultra‐fast Bootstrap Diode  Floating channel designed for bootstrap operation  Output source/sink current capabil

160 V pre-regulated three phase SOI gate driver with integrated charge pump, current sense amplifier, over-current protection, and bootstrap diodes

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated power management unit (PMU) with; o Linear pre-regulator to enable wide input VIN range o Integrated charge pump for stable VCC  Integrated current sense amplifier (CSA) with se

160 V pre-regulated three phase SOI gate driver with integrated charge pump, current sense amplifier, over-current protection, and bootstrap diodes

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated power management unit (PMU) with; o Linear pre-regulator to enable wide input VIN range o Integrated charge pump for stable VCC  Integrated current sense amplifier (CSA) with se

1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP

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门驱动器

封装/外壳：28-SOIC（0.295"，7.50mm 宽），24 引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：1200V THREE PHASE DRIVER 集成电路（IC） 栅极驱动器

适用于 IGBT/SiC 模块和分立器件的 1200 V 三相栅极驱动器，带有集成自举二极管、过流保护和更严格的 UVLO 保护

用于电池供电 BLDC 电机控制器的 MOTIX™ 三相电机控制栅极驱动器 IC

6.5Vdc ??13.8 Vdc Input 0.6Vdc ??1.52Vdc, 135 A/20 A Output

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