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Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel –2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (–2.5V to –8V). Features • –2.5 A, –12 V, RDS(ON) = 110

Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel –2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (–2.5V to –8V). Features • –2.5 A, –12 V, RDS(ON) = 110

LED Driver IC for Cellular Phone

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