丝印代码：5N06；N-Channel Enhancement Mode Power MOSFET

文件：339.17 Kbytes Page：4 Pages

N-Channel Enhancement Mode Power MOSFET

文件：339.17 Kbytes Page：4 Pages

丝印代码：5N06L011；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

丝印代码：5N06L015；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

丝印代码：5N06L022；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

丝印代码：5N06N011；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

丝印代码：5N06N015；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

丝印代码：5N06N017；OptiMOS™-5 Power Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Normal level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested

丝印代码：5N06N022；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

丝印代码：5N06N032；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

丝印代码：5N06N008；OptiMOS™ 5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – enhancement mode – normal level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100 avalanche t

丝印代码：5N06N008；OptiMOS™ 5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – enhancement mode – normal level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100 avalanche t

丝印代码：5N06N008；OptiMOS™ 5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – enhancement mode – normal level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100 avalanche t

丝印代码：5N06050；OptiMOS™-5 Power Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Normal level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100 Avalanche tested

丝印代码：5N06L032；OptiMOS??5 Power Transistor

文件：1.01574 Mbytes Page：10 Pages

丝印代码：5N06N017；OptiMOS??5 Power Transistor

文件：1.01758 Mbytes Page：10 Pages

丝印代码：5N06L100；OptiMOS??5 Power Transistor

文件：1.01297 Mbytes Page：10 Pages

丝印代码：5N06N102；OptiMOS??5 Power-Transistor

文件：819.9 Kbytes Page：12 Pages

丝印代码：5N06L073；OptiMOS??5 Power-Transistor

文件：757.12 Kbytes Page：12 Pages

丝印代码：5N06N074；OptiMOS??5 Power-Transistor

文件：785.57 Kbytes Page：12 Pages

丝印代码：5N06105；OptiMOS??5 Power-Transistor

文件：758.93 Kbytes Page：12 Pages

陶瓷保险丝管（延时型）Ceramic Tube Fuse(Time-lag)UL/VDE/CCC Approved

Power Field Effect Transistors

Power Field Effect Transistors N-Channel Enhancement Mode Silicon Gate DPAK for Surface Mount or Insertion Mount

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, po

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, po

丝印代码：NCE6005AR；N-Channel Enhancement Mode Power MOSFET

文件：1.14303 Mbytes Page：6 Pages