型号 功能描述 生产厂家 企业 LOGO 操作
5962-1822001VXC

TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy

TI

德州仪器

5962-1822001VXC

TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy

TI

德州仪器

5962-1822001VXC

TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse

1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t

TI

德州仪器

5962-1822001VXC

TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse

1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t

TI

德州仪器

5962-1822001VXC

TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

文件:1.8583 Mbytes Page:41 Pages

TI

德州仪器

TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse

1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t

TI

德州仪器

更新时间:2025-12-15 17:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ADI
24+
N/A
6300
“芯达集团”专注军工级宇航级元器件欢迎来电咨询0755
5962-21-877-7595
25+
7
7
INTEL/英特尔
QQ咨询
DIP
824
全新原装 研究所指定供货商
TE/泰科
2508+
/
182881
一级代理,原装现货
TE
25+
729
原厂现货渠道
TE Connectivity Deutsch Connec
23+
原厂封装
100
只做原装只有原装现货实报
Texas Instruments
25+
原封装
77600
郑重承诺只做原装进口现货
TI
25+
CFP (HKR)
6000
原厂原装,价格优势
ADI/亚德诺
24+
CAN8
12000
原装正品 有挂就有货
TE/泰科
26+
NA
360000
只有原装

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