丝印代码：555I；Low-power single CMOS timer

Features • Very low power consumption: – 110 μA typ at VCC = 5 V – 90 μa typ at VCC = 3 V • High maximum astable frequency of 2.7 MHz • Pin-to-pin functionally-compatible with bipolar NE555(a) • Wide voltage range: +2 V to +16 V • Supply current spikes reduced during output transitions •

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) Efficiency 60 (Typ) • Cost Effective PowerMac

TIMER

文件：209.34 Kbytes Page：6 Pages

TIMER

文件：209.34 Kbytes Page：6 Pages

TIMER

文件：209.34 Kbytes Page：6 Pages

TIMER

文件：209.34 Kbytes Page：6 Pages