丝印代码：544A；GaAs MMIC T/R SWITCH, DC - 4 GHz

文件：315.18 Kbytes Page：6 Pages

丝印代码：544AE；GaAs MMIC T/R SWITCH, DC - 4 GHz

文件：315.18 Kbytes Page：6 Pages

封装/外壳：8-SMD，无引线 功能：启用/禁用（可编程） 包装：卷带（TR） 描述：XTAL OSCILLATOR 晶体，振荡器，谐振器 振荡器

封装/外壳：8-SMD，无引线 功能：启用/禁用 包装：带 描述：OSCILLATOR SMD 晶体，振荡器，谐振器 振荡器

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

UHF power MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange. A marking code showing gate-source voltage (VGS) information is provided for matched pair applications. FEATURES •

UHF push-pull power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the