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型号 功能描述 生产厂家 企业 LOGO 操作

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.075Ω ■ HIGH CURRENT POWER MODULE ■ AVALANCHE RUGGED TECHNOLOGY ■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY ■ EASY TO MOUNT ■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS ■ EXTREMELY LOW Rth (Junction to c

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.075Ω ■ HIGH CURRENT POWER MODULE ■ AVALANCHE RUGGED TECHNOLOGY ■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY ■ EASY TO MOUNT ■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS ■ EXTREMELY LOW Rth (Junction to c

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.075Ω ■ HIGH CURRENT POWER MODULE ■ AVALANCHE RUGGED TECHNOLOGY ■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY ■ EASY TO MOUNT ■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS ■ EXTREMELY LOW Rth (Junction to c

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

更新时间:2026-5-22 22:30:01
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