丝印代码：5109BSD；LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri

丝印代码：5109BSD；LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri

丝印代码：5109BSD；LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri

丝印代码：5109BSD；LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri

丝印代码：5109BSD；LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri

丝印代码：5109BSD；LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri

Ka-Band 3-Stage Self Bias Low Noise Amplifier

DESCRIPTION The MGFC5109 is a GaAs MMIC chip especially designed for 27.0 ~ 30.0 GHz band Low Noise Amplifier.(LNA) . FEATURES ● RF frequency : 27.0 to 30.0 GHz ● Super Low Noise NF=2.5dB (TYP.)

1 AMP POSITIVE STEP-DOWN INTEGRATED SWITCHING REGULATOR

文件：170.58 Kbytes Page：7 Pages

1 AMP POSITIVE STEP-DOWN INTEGRATED SWITCHING REGULATOR

文件：170.58 Kbytes Page：7 Pages

1 AMP POSITIVE STEP-DOWN INTEGRATED SWITCHING REGULATOR

文件：170.58 Kbytes Page：7 Pages

1 AMP POSITIVE STEP-DOWN INTEGRATED SWITCHING REGULATOR

文件：170.58 Kbytes Page：7 Pages