DFN-中低压MOS

丝印代码：50N02TFXXXYY；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TF50N02 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) @4.5V (typ) ID 20V 5.1mΩ 50A ● High density cell design for ultra low Rdson ● Fully

N-Channel 20-V (D-S) 175 Degree Celcious MOSFET

N-Channel 20-V (D-S) 175 Degree Celcious MOSFET

文件：52.75 Kbytes Page：4 Pages

N-Channel 20-V (D-S) 175° MOSFET

文件：246.36 Kbytes Page：3 Pages

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 20V RDSON (MAX.) 45mΩ ID 3.6A Pb‐Free Lead Plating & Halogen Free

N-Channel Logic Level Enhancement Mode Field Effect Transistor

[Niko-Sem] N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-252 (D PAK)

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：45.18 Kbytes Page：3 Pages

N-Channel 20 V (D-S) 175 째C MOSFET

文件：163.59 Kbytes Page：7 Pages