Low-Frequency General-Purpose Amplifier Applications

PNP Epitaxial Planar Silicon Transistor Features • Large current capacitance. • Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=210mΩ [IC=0.5A, IB=50mA]. • Ultrasmall package facilitates miniaturization in end products. • Small ON-resistance (Ron). Applications

Bipolar Transistor -50V, -0.4A, Low VCE(sat) PNP Single SSFP

Bipolar Transistor –50V, –0.4A, Low VCE(sat) PNP Single SSFP Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210mΩ[IC=0.5A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Appli

双极晶体管，-50V，-0.4A，低饱和压，PNP 单 SSFP

Bipolar Transistor -50V, -0.4A, Low VCE(sat) PNP Single SSFP

Bipolar Transistor –50V, –0.4A, Low VCE(sat) PNP Single SSFP Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210mΩ[IC=0.5A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Appli

封装/外壳：SC-81 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 0.4A 3SSFP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar Transistor ??0V, ??.5A, Low VCE(sat) PNP Single CPH3

Bipolar Transistor −50V, −0.5A, Low VCE(sat), PNP Single Features • High Collector Current Capability • Low Collector to Emitter Saturation Voltage (Resistance): RCE(sat) typ=210mΩ [IC=0.5A, IB=50mA] • Low ON-Resistance (Ron) • Pb-Free, Halogen Free and RoHS compliance Typical Applicati

Bipolar Transistor

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Low-Frequency General-Purpose Amplifier Applications

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Low-Frequency General-Purpose Amplifier Applications

文件：71.29 Kbytes Page：4 Pages

Bipolar Transistor

文件：304.45 Kbytes Page：5 Pages