位置：首页 > IC中文资料第6868页 > 4X16E83V
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
4X16E83V | 4 MEG x 16 EDO DRAM [MEMPHIS] GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
4 MEG x 16 EDO DRAM [MEMPHIS] GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are | ETCList of Unclassifed Manufacturers 未分类制造商 | |
4X16E83V产品属性
- 类型
描述
- 型号
4X16E83V
- 功能描述
4 MEG x 16 EDO DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
2450+ |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
||||
4X2901B |
25+ |
4 |
4 |
||||
STARRAM |
24+ |
NA/ |
906 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
STARRAM |
2223+ |
TSOP86 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
FORD |
新 |
2812 |
全新原装 货期两周 |
||||
STARRAM |
24+ |
TSOP86 |
43200 |
郑重承诺只做原装进口现货 |
|||
STARRAM |
25+ |
TSOP86 |
54815 |
百分百原装现货,实单必成,欢迎询价 |
|||
STARRAM |
24+ |
TSOP86 |
9600 |
原装现货,优势供应,支持实单! |
|||
ATARRAM |
2447 |
TSOP54 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
J |
NA |
8553 |
一级代理 原装正品假一罚十价格优势长期供货 |
4X16E83V芯片相关品牌
4X16E83V规格书下载地址
4X16E83V参数引脚图相关
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4X16E83V数据表相关新闻
5.0SMDJ33CA
5.0SMDJ33CA
2023-2-224N90L-TO220FT-TGFC_UTC代理商
4N90L-TO220FT-TGFC_UTC代理商
2023-2-134N80L-TO252R-TGFC_UTC代理商
4N80L-TO252R-TGFC_UTC代理商
2023-2-134N90CL-TO220FT-TG_UTC代理商
4N90CL-TO220FT-TG_UTC代理商
2023-2-34月1日生效! MLCC涨价10~20%
涨价
2021-3-314节点起步！戴尔科技云平台迎来多项更新-如需了解请认真阅读
4节点起步！戴尔科技云平台迎来多项更新-如需了解请认真阅读
2020-6-30
DdatasheetPDF页码索引
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