位置：首页 > IC中文资料第6868页 > 4X16E83V
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
4X16E83V | 4 MEG x 16 EDO DRAM [MEMPHIS] GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
4 MEG x 16 EDO DRAM [MEMPHIS] GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are | ETCList of Unclassifed Manufacturers 未分类制造商 | |
4X16E83V产品属性
- 类型
描述
- 型号
4X16E83V
- 功能描述
4 MEG x 16 EDO DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STARRAM |
24+ |
NA/ |
906 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
xilinx |
22+ |
TSOP86 |
6800 |
||||
STARRAM |
25+ |
TSOP86 |
54815 |
百分百原装现货,实单必成,欢迎询价 |
|||
STARRAM |
23+ |
TSOP54 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
PHI |
2450+ |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
||||
4X2901B |
25+ |
4 |
4 |
||||
FORD |
新 |
2812 |
全新原装 货期两周 |
||||
STARRAM |
24+ |
TSOP86 |
43200 |
郑重承诺只做原装进口现货 |
|||
STARRAM |
10+ |
TSOP86 |
17 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
STARRAM |
24+ |
TSOP86 |
9600 |
原装现货,优势供应,支持实单! |
4X16E83V规格书下载地址
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4X16E83V数据表相关新闻
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涨价
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2020-6-30
DdatasheetPDF页码索引
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