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4N29S价格
参考价格：￥1.3534
型号：4N29SM 品牌：Fairchild 备注：这里有4N29S多少钱，2026年最近7天走势，今日出价，今日竞价，4N29S批发/采购报价，4N29S行情走势销售排行榜，4N29S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
4N29S | GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ VDE 0884 approval available as a test op | FAIRCHILD 仙童半导体 |   | |
6 PIN PHOTODARLINGTON PHOTOCOUPLER Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3 | EVERLIGHT 台湾亿光 | | ||
6 PIN PHOTODARLINGTON PHOTOCOUPLER Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3 | EVERLIGHT 台湾亿光 | | ||
GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ VDE 0884 approval available as a test op | FAIRCHILD 仙童半导体 | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
General Purpose 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ VDE 0884 approval available as a test op | FAIRCHILD 仙童半导体 | | ||
6-Pin DIP General Purpose Photodarlington Optocoupler Features ■ High Sensitivity to Low Input Drive Current ■ Meets or Exceeds All JEDEC Registered Specifications ■ Safety and Regulatory Approvals: – UL1577, 4,170 VAC RMS for 1 Minute ■ DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications ■ Low Power Logic Circuits ■ Tel | ONSEMI 安森美半导体 | | ||
6-Pin DIP General Purpose Photodarlington Optocoupler Features ■ High Sensitivity to Low Input Drive Current ■ Meets or Exceeds All JEDEC Registered Specifications ■ Safety and Regulatory Approvals: – UL1577, 4,170 VAC RMS for 1 Minute ■ DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications ■ Low Power Logic Circuits ■ Tel | ONSEMI 安森美半导体 | | ||
General Purpose 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ VDE 0884 approval available as a test op | FAIRCHILD 仙童半导体 | | ||
6-Pin DIP General Purpose Photodarlington Optocoupler Features ■ High Sensitivity to Low Input Drive Current ■ Meets or Exceeds All JEDEC Registered Specifications ■ Safety and Regulatory Approvals: – UL1577, 4,170 VAC RMS for 1 Minute ■ DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications ■ Low Power Logic Circuits ■ Tel | ONSEMI 安森美半导体 | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
DC Input 6-Pin Photodarlington Optocoupler Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil | CTMICRO | | ||
6 PIN PHOTODARLINGTON PHOTOCOUPLER Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3 | EVERLIGHT 台湾亿光 | | ||
6 PIN PHOTODARLINGTON PHOTOCOUPLER Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3 | EVERLIGHT 台湾亿光 | | ||
6-Pin DIP General Purpose Photodarlington Optocoupler Features ■ High Sensitivity to Low Input Drive Current ■ Meets or Exceeds All JEDEC Registered Specifications ■ Safety and Regulatory Approvals: – UL1577, 4,170 VAC RMS for 1 Minute ■ DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications ■ Low Power Logic Circuits ■ Tel | ONSEMI 安森美半导体 | | ||
6 PIN PHOTODARLINGTON 文件：331.7 Kbytes Page：13 Pages | EVERLIGHT 台湾亿光 | | ||
6 PIN PHOTODARLINGTON 文件：331.7 Kbytes Page：13 Pages | EVERLIGHT 台湾亿光 | | ||
6 PIN PHOTODARLINGTON 文件：331.7 Kbytes Page：13 Pages | EVERLIGHT 台湾亿光 | | ||
6 PIN PHOTODARLINGTON 文件：331.7 Kbytes Page：13 Pages | EVERLIGHT 台湾亿光 | | ||
STANDARD THRU HOLE CASE 730A-04 The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series is designed for use in applications requiring high collector output currents at lower input currents. • Higher | MOTOROLA 摩托罗拉 | | ||
GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS 文件：136.49 Kbytes Page：6 Pages | QT | | ||
Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) Photocoupler These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor in a 6-pin package. FEATURES • Small Package Size • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio : Type 1000 (at IF=10mA, VCE=10V) • Electrical | KODENSHI 可天士 | | ||
Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) Photocoupler These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor in a 6-pin package. FEATURES • Small Package Size • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio : Type 1000 (at IF=10mA, VCE=10V) • Electrical | KODENSHI 可天士 | | ||
HIGH TRANSFER EFFICIENCY GENERAL PURPOSE TYPE PHOTOCOUPLER 文件：167.67 Kbytes Page：4 Pages | SHARPSharp Corporation 夏普 | |
4N29S产品属性
- 类型
描述
- 型号
4N29S
- 功能描述
晶体管输出光电耦合器 SO-6 PHOTO DARL
- RoHS
否
- 制造商
Vishay Semiconductors
- 输入类型
DC
- 最大集电极/发射极电压
70 V
- 最大集电极/发射极饱和电压
0.4 V
- 绝缘电压
5300 Vrms
- 电流传递比
100 % to 200 %
- 最大正向二极管电压
1.65 V
- 最大输入二极管电流
60 mA
- 最大集电极电流
100 mA
- 最大功率耗散
100 mW
- 最大工作温度
+ 110 C
- 最小工作温度
- 55 C
- 封装/箱体
DIP-4
- 封装
Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
25+ |
SMD |
20000 |
原装 |
|||
FAIRCHILDONSEMICONDUCTOR |
23+ |
NA |
3000 |
电子元器件供应原装现货. 优质独立分销。原厂核心渠道 |
|||
FAIRCHILD |
12+ |
SOP-6 |
163 |
原装现货海量库存欢迎咨询 |
|||
fsc |
23+ |
NA |
5636 |
专做原装正品,假一罚百! |
|||
FAIRCHILD/仙童 |
2450+ |
SOP6 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
FAIRCHILD/仙童 |
2026+ |
DIPSOP |
65248 |
百分百原装现货 实单必成 |
|||
FAIRCHILD/仙童 |
2223+ |
SOP-6 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
FAIRCHILDONSEMICONDUCTOR |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
onsemi(安森美) |
25+ |
SMD-6P |
31277 |
正规渠道,大量现货,只等你来。 |
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4N29S规格书下载地址
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2018-12-22
DdatasheetPDF页码索引
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