Silicon N-Channel Power MOS FET Array

Silicon N-Channel Power MOS FET Array Features • Low on-resistance RDS(on) ≤0.06 , VGS = 10 V, ID= 5 A RDS(on) ≤0.075 , VGS = 4 V, ID= 5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for

Silicon N-Channel Power MOS FET Array

Silicon N-Channel Power MOS FET Array •  Low on-resistance\n   RDS(on) ≤0.06  , VGS = 10 V, ID= 5 A\n   RDS(on) ≤0.075  , VGS = 4 V, ID= 5 A\n•  Capable of 4 V gate drive\n•  Low drive current\n•  High speed switching\n•  High density mounting\n•  Suitable for motor driver and solenoid driver and lamp driverApplication\nHigh speed power;