44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET

Features • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced rDS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Junction Temperature

HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die

Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features RF Capable MOSFETs Double Metal Process for Low Gate Resistance Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier

HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die

Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features RF Capable MOSFETs Double Metal Process for Low Gate Resistance Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier

HiPer FET Power MOSFETs Q-CLASS

HiPerFET™ Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on)

HiPerFET Power MOSFETs

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