P-Channel Enhancement Mode Power MOSFET

Description The 4435B uses advanced trench technology to provide excellent RDS , low gate charge and operation with gate voltages as low as 4.5V. General Features ● VDS = -30V RDS

P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m廓

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

ARX4435 Transceiver for Macair H009 Specification

General Description The Aeroflex Laboratories Incorporated model ARX4435 and ARX4435FP are new generation monolithic transceivers which provides compliance with Macair H009 data bus requirements. The model ARX4435 and ARX4435FP perform the front-end analog function of inputting and outputtin

ARX4435 Transceiver for Macair H009 Specification

General Description The Aeroflex Laboratories Incorporated model ARX4435 and ARX4435FP are new generation monolithic transceivers which provides compliance with Macair H009 data bus requirements. The model ARX4435 and ARX4435FP perform the front-end analog function of inputting and outputtin

ARX4435N Transceiver for Macair H009 Specification

General Description The Aeroflex Laboratories Incorporated model ARX4435N and ARX4435NFP are new generation monolithic transceivers which provides compliance with Macair H009 data bus requirements. The ARX4435N and ARX4435NFP perform the front-end analog function of inputting and outputting data

ARX4435N Transceiver for Macair H009 Specification

General Description The Aeroflex Laboratories Incorporated model ARX4435N and ARX4435NFP are new generation monolithic transceivers which provides compliance with Macair H009 data bus requirements. The ARX4435N and ARX4435NFP perform the front-end analog function of inputting and outputting data

P-Channel Logic Level PowerTrench?줞OSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features • –9 A, –30 V. RDS(ON) = 0.017 Ω @ VGS =