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丝印代码:4406A;30V N-Channel Enhancement-Mode MOSFET

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HMSEMI

华之美半导体

4406A

30V N-Channel MOSFET

General Description The AO4406A uses advanced trench technology to provide excellent RDS(ON)with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Product Summary VDS 30V ID(at VGS=10V) 13A RDS(ON)(at VGS=10V)

AOSMD

万国半导体

N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

General Description The AO4406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. Features VDS (V) = 30V ID = 11.5A RDS(ON)

ALPHA

Security & Chip Card ICs???

文件:121.86 Kbytes Page:5 Pages

INFINEON

英飞凌

Security & Chip Card ICs???

文件:121.86 Kbytes Page:5 Pages

INFINEON

英飞凌

Security & Chip Card ICs???

文件:121.86 Kbytes Page:5 Pages

INFINEON

英飞凌

Security & Chip Card ICs???

文件:121.86 Kbytes Page:5 Pages

INFINEON

英飞凌

更新时间:2026-5-22 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HMSEMI
23+
SOP-8
37650
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