Circuit Playground Express for 4-H

Circuit Playground Express is the next step towards a perfect introduction to electronics and programming. We've taken the original Circuit Playground Classic and made it even better! Not only did we pack even more sensors in, we also made it even easier to program.\n\nThis version is 4-H themed, fo

Lockit™ Loops and Clips

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Lockit Loops and Clips

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包装：散装 描述：FUSECLIP 电路保护 配件

包装：散装 描述：BINDPOST STRIP 4POS 0.437\ 连接器，互连器件 端子条和转台板

丝印代码：4180A1；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) • Gain

丝印代码：4180A1；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) • Gain

丝印代码：4180A2；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) • Gain

丝印代码：4180A2；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) • Gain

丝印代码：4180A3；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) • Gain

丝印代码：4180A3；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) • Gain

丝印代码：4180A4；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) • Gain

丝印代码：4180A4；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) • Gain

丝印代码：4180A4；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) • Gain

丝印代码：4180A4；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) • Gain

丝印代码：4180A1；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：3.01627 Mbytes Page：51 Pages

丝印代码：4180A1Q；Automotive, low- and high-side voltage output, current-sense amplifiers

文件：1.52693 Mbytes Page：41 Pages

丝印代码：4180A1Q；Automotive, Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：1.42932 Mbytes Page：39 Pages

丝印代码：4180A2；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：3.01627 Mbytes Page：51 Pages

丝印代码：4180A2Q；Automotive, low- and high-side voltage output, current-sense amplifiers

文件：1.52693 Mbytes Page：41 Pages

丝印代码：4180A2Q；Automotive, Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：1.42932 Mbytes Page：39 Pages

丝印代码：4180A3；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：3.01627 Mbytes Page：51 Pages

丝印代码：4180A3Q；Automotive, low- and high-side voltage output, current-sense amplifiers

文件：1.52693 Mbytes Page：41 Pages

丝印代码：4180A3Q；Automotive, Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：1.42932 Mbytes Page：39 Pages

丝印代码：4180A4；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：3.01627 Mbytes Page：51 Pages

丝印代码：4180A4Q；Automotive, low- and high-side voltage output, current-sense amplifiers

文件：1.52693 Mbytes Page：41 Pages

丝印代码：4180A4Q；Automotive, Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：1.42932 Mbytes Page：39 Pages

400 Watts Transient Voltage Suppressor Diodes

Features ◇ 400W surge capability at 10 x 100us waveform, duty cycle: 0.01 ◇ Excellent clamping capability ◇ Low zener impedance ◇ Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns for bidirectional ◇ Typical IR less than 1 uA above 10V ◇ High tem

400 Watts Transient Voltage Suppressor Diodes

Features ◇ 400W surge capability at 10 x 100us waveform, duty cycle: 0.01 ◇ Excellent clamping capability ◇ Low zener impedance ◇ Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns for bidirectional ◇ Typical IR less than 1 uA above 10V ◇ High tem

400 Watts Transient Voltage Suppressor Diodes

Features ◇ 400W surge capability at 10 x 100us waveform, duty cycle: 0.01 ◇ Excellent clamping capability ◇ Low zener impedance ◇ Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns for bidirectional ◇ Typical IR less than 1 uA above 10V ◇ High tem

400 Watts Transient Voltage Suppressor Diodes

Features ◇ 400W surge capability at 10 x 100us waveform, duty cycle: 0.01 ◇ Excellent clamping capability ◇ Low zener impedance ◇ Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns for bidirectional ◇ Typical IR less than 1 uA above 10V ◇ High tem

400 Watts Transient Voltage Suppressor Diodes

Features ◇ 400W surge capability at 10 x 100us waveform, duty cycle: 0.01 ◇ Excellent clamping capability ◇ Low zener impedance ◇ Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns for bidirectional ◇ Typical IR less than 1 uA above 10V ◇ High tem

400 Watts Transient Voltage Suppressor Diodes

Features ◇ 400W surge capability at 10 x 100us waveform, duty cycle: 0.01 ◇ Excellent clamping capability ◇ Low zener impedance ◇ Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns for bidirectional ◇ Typical IR less than 1 uA above 10V ◇ High tem

400 Watts Transient Voltage Suppressor Diodes

Features ◇ 400W surge capability at 10 x 100us waveform, duty cycle: 0.01 ◇ Excellent clamping capability ◇ Low zener impedance ◇ Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns for bidirectional ◇ Typical IR less than 1 uA above 10V ◇ High tem

400 Watts Transient Voltage Suppressor Diodes

Features ◇ 400W surge capability at 10 x 100us waveform, duty cycle: 0.01 ◇ Excellent clamping capability ◇ Low zener impedance ◇ Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns for bidirectional ◇ Typical IR less than 1 uA above 10V ◇ High tem

400 Watts Transient Voltage Suppressor Diodes

Features ◇ 400W surge capability at 10 x 100us waveform, duty cycle: 0.01 ◇ Excellent clamping capability ◇ Low zener impedance ◇ Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns for bidirectional ◇ Typical IR less than 1 uA above 10V ◇ High tem

400 Watts Transient Voltage Suppressor Diodes

Features ◇ 400W surge capability at 10 x 100us waveform, duty cycle: 0.01 ◇ Excellent clamping capability ◇ Low zener impedance ◇ Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns for bidirectional ◇ Typical IR less than 1 uA above 10V ◇ High tem

400 Watts Transient Voltage Suppressor Diodes

Features ◇ 400W surge capability at 10 x 100us waveform, duty cycle: 0.01 ◇ Excellent clamping capability ◇ Low zener impedance ◇ Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns for bidirectional ◇ Typical IR less than 1 uA above 10V ◇ High tem

400 Watts Transient Voltage Suppressor Diodes

Features ◇ 400W surge capability at 10 x 100us waveform, duty cycle: 0.01 ◇ Excellent clamping capability ◇ Low zener impedance ◇ Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns for bidirectional ◇ Typical IR less than 1 uA above 10V ◇ High tem

400 Watts Transient Voltage Suppressor Diodes

Features ◇ 400W surge capability at 10 x 100us waveform, duty cycle: 0.01 ◇ Excellent clamping capability ◇ Low zener impedance ◇ Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns for bidirectional ◇ Typical IR less than 1 uA above 10V ◇ High tem

RECEPTACLE, FASTON, FLAG,.250 SERIES

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FASTON Receptacles

文件：944.84 Kbytes Page：22 Pages

THIS DRAWING IS A CONTROLLED DOCUMENT.

文件：48.64 Kbytes Page：1 Pages

FASTON Receptacles

文件：944.84 Kbytes Page：22 Pages

THIS DRAWING IS A CONTROLLED DOCUMENT.

文件：47.66 Kbytes Page：1 Pages

FASTON Receptacles

文件：944.84 Kbytes Page：22 Pages

压线端子

FASTON Receptacles

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圆形(线缆)连接器

Aavid Aluminum Oxide Ceramic for use with a TO-218, TO-247 & TO-3P device

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Lockit™ Loops and Clips

文件：112.75 Kbytes Page：1 Pages

Lockit Loops and Clips

文件：112.74 Kbytes Page：1 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Extremely low noise voltage caused from diode (1/3 to 1/10 of our conventional MAZ4000 series) • Extremely good rising performance (in the low-current range) • Easy-to-identify the zener-voltage rank by the color bands • Easy

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Extremely low noise voltage caused from diode (1/3 to 1/10 of our conventional MAZ4000 series) • Extremely good rising performance (in the low-current range) • Easy-to-identify the zener-voltage rank by the color bands • Easy

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Extremely low noise voltage caused from diode (1/3 to 1/10 of our conventional MAZ4000 series) • Extremely good rising performance (in the low-current range) • Easy-to-identify the zener-voltage rank by the color bands • Easy

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Extremely low noise voltage caused from diode (1/3 to 1/10 of our conventional MAZ4000 series) • Extremely good rising performance (in the low-current range) • Easy-to-identify the zener-voltage rank by the color bands • Easy