402/403 All-Welded Flanged Diaphragm Seal

FEATURES „ All-welded construction ensures a leaktight, tamper-proof seal „ Provided standard with corrosion-resistant 316L Stainless steel top housing

包装：散装 描述：ELECTROLUMINESCENT WIRE RED 2.5M 光电器件 电致发光

包装：散装 描述：HACKSAW 工具 专用工具

Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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Surface Mount Quartz Crystal

文件：132.21 Kbytes Page：3 Pages

ISA 48 Channel TTL Digital Interface

Features • 48 channels of buffered TTL I/O • Each 8-bit port individually configurable as input or output • Built around true dual 8255 parallel I/O chips • Power (+5V and +12V) and ground provided on connectors • Two industry-standard 50-pin solid-state relay rack connectors • SeaI/O Classi

10W - 33KV SINGLEOUTPUT DC / DC INDUSTRIAL

Features • 0 to 100 adjustability. • Voltage programmable. • Voltage monitor. • Remote on/off control. • EMI/RFI shielding. • Short circuit, reverse polarity protection. • Arc protection.

Inductive Sensor

Features ■Threaded barrel, M12 x 1 ■Plastic, PA12‐GF30 ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Cable connection ■ATEX category II 2 G, Ex Zone 1 ■ATEX category II 1 D, Ex Zone 20 ■SIL 2 (Low Demand Mode) acc. to IEC 61508, PL c acc. to ISO 13849-1 at HFT0 ■SIL

Inductive Sensor

Features ■Threaded barrel, M12 x 1 ■Plastic, PA12‐GF30 ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Cable connection Functional principle Inductive sensors detect metal objects contactless and wear-free. For this, they use a high-frequency electromagnetic AC field th

WE-TTT Thermal Transfer Tape

General Information: Operating Temperature -20 up to +90 °C Storage Conditions (in original packaging)

Quad exclusive OR gate

Description BU4001B series ICs are 2-input positive logic NOR gates, each with four built-in circuits. A buffer achieved by an inverter added at the gate output improves the input / output propagation characteristics and minimizes variation in the propagation time caused by an increase in the loa

Quad Exclusive-OR Gate

The SL4030B types consist of four independent Exclusive-OR gates. The SL4030B provides the system designer with a means for direct implementation of the Exlusive-OR function. · Operating Voltage Range: 3.0 to 18 V · Maximum input current of 1 μA at 18 V over full package temperature range;

Quadruple exclusive-OR gate

DESCRIPTION The HEF4030B provides the positive quadruple exclusive-OR function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.

QUAD EXCLUSIVE-OR GATE

DESCRIPTION The HCC4030B (extended temperature range) and HCF4030B (intermediate temperature range) are monolithic integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micro package. ■ MEDIUM-SPEED OPERATION – tPHL = tPLH = 60ns (typ.) @ CL = 50pF and VDD

CMOS Quad Exclusive-OR Gate

Description The CD4030BMS types consist of four independent Exclusive-OR gates. The CD4030BMS provides the system designer with a means for direct implementation of the Exclusive-OR function. Features • High Voltage Type (20V Rating) • Medium-Speed Operation     - tPHL, tPLH = 65ns (typ) at V

TinyFET??P-Channel MOSFET Preliminary Information

General Description The MIC94030 and MIC94031 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package. Designed for high-side switch applications where space is critical, the MIC94030/1 exhibits an on-resistance of typically 0.75Ωat 4.5V gate-to-s

QUAD EXCLUSIVE-OR GATE

TC4030B Quad Exclusive-OR Gate TC4030B contains four circuits of exclusive OR gates. Since the buffers of two stage inverters are provided for all the outputs, the input/output voltage characteristic has been improved and the noise immunity has been also improved. And increase of transmission tim

CONNECTORIZED PHASE SHIFTERS

DESCRIPTION Digital phase shifters optimized for low loss and/or high power. Each one features a unique capability which allows it to be used in either the transmit or receive path. Hermetic, military/industrial design. ADDITIONAL FEATURES (#4031) ■ Low loss: 1.7 dB ■ RF power: 50 dBm CONNECT

CONNECTORIZED PHASE SHIFTERS

DESCRIPTION Digital phase shifters optimized for low loss and/or high power. Each one features a unique capability which allows it to be used in either the transmit or receive path. Hermetic, military/industrial design. ADDITIONAL FEATURES (#4031) ■ Low loss: 1.7 dB ■ RF power: 50 dBm CONNECT

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

CONNECTORIZED PHASE SHIFTERS

DESCRIPTION Digital phase shifters optimized for low loss and/or high power. Each one features a unique capability which allows it to be used in either the transmit or receive path. Hermetic, military/industrial design. ADDITIONAL FEATURES (#4031) ■ Low loss: 1.7 dB ■ RF power: 50 dBm CONNECT

Toroidal Surface Mount Inductors

DESCRIPTION The 4000 series is a range of surface mount toroidal inductors designed for use in switching power supplies and DC/DC converters. The parts are ideal for applications requiring low profile compact components in a surface mount package. FEATURES ■ 3.3µH to 330µH ■ Surface Mounting

Toroidal Surface Mount Inductors

DESCRIPTION The 4000 series is a range of surface mount toroidal inductors designed for use in switching power supplies and DC/DC converters. The parts are ideal for applications requiring low profile compact components in a surface mount package. FEATURES ■ 3.3µH to 330µH ■ Surface Mounting

CONNECTORIZED PHASE SHIFTERS

DESCRIPTION Digital phase shifters optimized for low loss and/or high power. Each one features a unique capability which allows it to be used in either the transmit or receive path. Hermetic, military/industrial design. ADDITIONAL FEATURES (#4031) ■ Low loss: 1.7 dB ■ RF power: 50 dBm CONNECT

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

CONNECTORIZED PHASE SHIFTERS

DESCRIPTION Digital phase shifters optimized for low loss and/or high power. Each one features a unique capability which allows it to be used in either the transmit or receive path. Hermetic, military/industrial design. ADDITIONAL FEATURES (#4031) ■ Low loss: 1.7 dB ■ RF power: 50 dBm CONNECT

AUXILIARY ACTUATORS

Easy to assemble auxiliary actuators for the MM Series provides the end-user with the capability to operate the switch with force not directly in line with the operating button. Actuators are available in either the plain-leaf or roller-leaf style. Each actuator kit consists of the stainless ste

Inductive Sensor – With Extended Temperature Range

Features ■Threaded barrel, M18 x 1 ■Plastic, PA12‐GF30-V0 ■Temperatures up to -40 °C ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Cable connection ■ATEX category II 2 G, Ex Zone 1 ■ATEX category II 1 D, Ex Zone 20 for temperatures up to -25°C ■SIL 2 (Low Demand Mode

Inductive Sensor

Features ■Threaded barrel, M18 x 1 ■Plastic, PA12‐GF30-V0 ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Cable connection Functional principle Inductive sensors detect metal objects contactless and wear-free. For this, they use a high-frequency electromagnetic AC field

Inductive Sensor – With Extended Temperature Range

Features ■Threaded barrel, M18 x 1 ■Plastic, PA12‐GF30-V0 ■Temperatures up to -40 °C ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Cable connection ■ATEX category II 2 G, Ex Zone 1 ■ATEX category II 1 D, Ex Zone 20 for temperatures up to -25°C ■SIL 2 (Low Demand Mode

Inductive Sensor

Features ■Threaded barrel, M18 x 1 ■Plastic, PA12‐GF30-V0 ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Cable connection Functional principle Inductive sensors detect metal objects contactless and wear-free. For this, they use a high-frequency electromagnetic AC field

CONNECTORIZED PHASE SHIFTERS

DESCRIPTION Digital phase shifters optimized for low loss and/or high power. Each one features a unique capability which allows it to be used in either the transmit or receive path. Hermetic, military/industrial design. ADDITIONAL FEATURES (#4031) ■ Low loss: 1.7 dB ■ RF power: 50 dBm CONNECT

Inductive Sensor

Features ■Threaded barrel, M18 x 1 ■Plastic, PA12‐GF30-V0 ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Terminal chamber ■ATEX category II 2 G, Ex Zone 1 ■ATEX category II 1 D, Ex Zone 20 ■SIL 2 (Low Demand Mode) acc. to IEC 61508, PL c acc. to ISO 13849-1 at HFT0 ■S

Inductive Sensor

Features ■Threaded barrel, M18 x 1 ■Plastic, PA12‐GF30 ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■M12 x 1 male connector Functional principle Inductive sensors detect metal objects contactless and wear-free. For this, they use a high-frequency electromagnetic AC fi

Inductive Sensor

Features ■Threaded barrel, M18 x 1 ■Plastic, PA12‐GF30-V0 ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Terminal chamber ■ATEX category II 2 G, Ex Zone 1 ■ATEX category II 1 D, Ex Zone 20 ■SIL 2 (Low Demand Mode) acc. to IEC 61508, PL c acc. to ISO 13849-1 at HFT0 ■S

CONNECTORIZED PHASE SHIFTERS

DESCRIPTION Digital phase shifters optimized for low loss and/or high power. Each one features a unique capability which allows it to be used in either the transmit or receive path. Hermetic, military/industrial design. ADDITIONAL FEATURES (#4031) ■ Low loss: 1.7 dB ■ RF power: 50 dBm CONNECT

ELECTRICAL CHARACTERISTICS

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

CMOS QUAD EXCLUSIVE-OR GATE

CMOS Quad Exclusive-OR Gate

Quad EXCLUSIVE-OR Gate

CMOS QUAD EXCLUSIVE-OR GATE

CMOS QUAD EXCLUSIVE-OR GATE

Quad EXCLUSIVE-OR Gate

Quad 2-Input EXCLUSIVE-OR, NOR Gate

CMOS Quad Exclusive-OR and Exclusive-NOR Gate

Quad 2-Input EXCLUSIVE-OR Gate

CMOS Quad Exclusive OR and Exclusive NOR Gates

QUAD EXCLUSIVE-OR GATE

Quadruple exclusive-OR gate

Quadruple exclusive-OR gate

QUAD EXCLUSIVE - OR GATE

Quad Exclusive-OR Gate

QUAD EXCLUSIVE-OR GATE