丝印代码：3NF06L；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

N-channel 60 V, 0.07 廓, 4 A, SOT-223 STripFET??II Power MOSFET

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N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET??II POWER MOSFET

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Digital constant-current controller

文件：952.14 Kbytes Page：34 Pages

N-channel 60 V, 0.07 廓, 4 A, SOT-223 STripFET??II Power MOSFET

文件：251.94 Kbytes Page：12 Pages