3 Amps, 900 Volts N-CHANNEL POWER MOSFET

The UTC 3N90Z provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. • RDS(ON)=4.1Ω @VGS=10 V \n• Ultra Low Gate Charge ( typical 22.7 nC ) \n• Low Reverse Transfer Capacitance ( CRSS= Typical 13 pF ) \n• Fast Switching Capability \n• Avalanche Energy Specified \n• Improved dv/dt Capability, High Ruggedness;

3 Amps, 900 Volts N-CHANNEL POWER MOSFET

文件：185.94 Kbytes Page：6 Pages

3 Amps, 900 Volts N-CHANNEL POWER MOSFET

文件：185.94 Kbytes Page：6 Pages

3 Amps, 900 Volts N-CHANNEL POWER MOSFET

文件：185.94 Kbytes Page：6 Pages

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

Advanced Power MOSFET

文件：187.12 Kbytes Page：7 Pages