位置：首页 > IC中文资料第7630页 > 3N80L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer | UTC 友顺 |   | ||
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
Power MOSFET 文件：1.29085 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
Power MOSFET 文件：1.29084 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with | FAIRCHILD 仙童半导体 | | ||
N-CHANNEL POWER MOSFETS 文件：281.01 Kbytes Page：5 Pages | SAMSUNG 三星 | | ||
ADVANCED POWER MOSFET 文件：321.97 Kbytes Page：6 Pages | SAMSUNG 三星 | |
3N80L产品属性
- 类型
描述
- 型号
3N80L
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
3 Amps, 800 Volts N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
K |
2026+ |
TO251 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
UTC |
16+17+ |
TO-220 |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MOT |
2602+ |
CAN4 |
8985 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
UTC |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
FSC |
22+ |
TO-220 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
士兰微 |
21+ |
TO-220F |
880000 |
明嘉莱只做原装正品现货 |
|||
UTC/友顺 |
26+ |
TO-220 |
43600 |
全新原装现货,假一赔十 |
|||
FSC/TRUES |
25+23+ |
TO-220 |
25489 |
绝对原装正品全新进口深圳现货 |
|||
ON |
23+ |
N/A |
10000 |
正规渠道,只有原装! |
|||
N/A |
25+ |
TO-220F |
8000 |
只有原装 |
3N80L规格书下载地址
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DdatasheetPDF页码索引
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