N-Channel 650 V (D-S) Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

3A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications

3A, 650V N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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