3A, 650V N-CHANNEL POWER MOSFET

The UTC 3N65-TA is a high voltage power MOSFET designedto have better characteristics, such as fast switching time, low gatecharge, low on-state resistance and high rugged avalanchecharacteristics. This power MOSFET is usually used in high speedswitching applications of switching power supplies and RDS(ON) < 3.5Ω @ VGS=10V, ID=1.5A Fast switching capability Avalanche energy tested Improved dv/dt capability, high ruggedness;

3.0A, 650V   N-CHANNEL  POWER MOSFET

The UTC 3N65-TA5 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This  power MOSFET is usually used at high speed  switching applications RDS(ON) < 3.8Ω @ VGS = 10 V, ID = 1.5AFast switching capabilityAvalanche energy specifiedImproved dv/dt capability, high ruggedness;

N-CHANNEL POWER MOSFET

DESCRIPTION 3N60 3N65 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic

3A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications

3A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N65K is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching application

NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS

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3A, 650V N-CHANNEL POWER MOSFET

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