SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR

Silicon Dual Insulated-Gate Field-Effect Transistor With Integrated Gate-Protection Circuits For Military and Industrial Applications up to 500 MHz Applications ● RF amplifier, mixer, and IF amplifier in military and industrial communications equipment ● Aircraft and marine vehicular receiver

DUAL-GATE MOSFET

DUAL-GATE MOSFET N-CHANNEL - DEPLETION

DUAL GATE MOSFET VHF AMPLIFIER

TO-72

Discrete Semiconductors

Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge

Discrete Semiconductors

Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge

DUAL GATE MOSFET VHF AMPLIFIER

TO-72

TO-72

DUAL GATE MOSFET VHF AMPLIFIER

Discrete Semiconductors

Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge

360mW Dual gate mosfet

This Dual gate mosfet diode is packaged in TO-72 package, which has a power dissipation of 360mW.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Discrete Semiconductors

Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge

Discrete Semiconductors

Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge

DUAL-GATE MOSFET

DUAL-GATE MOSFET N-CHANNEL - - DEPLETION (TO-72) METAL

6367254 MOTOROLA SC (XSTRS/R F)

DUAL-GATE MOSFET N-CHANNEL - - DEPLETION

Silicon Dual Insulated-Gate Field-Effect Transistors

Silicon Dual Insulated-Gate Field-Effect Transistors With Integrated Gate-Protection Circuits for VHF TV Applications

Silicon Dual Insulated-Gate Field-Effect Transistors

Silicon Dual Insulated-Gate Field-Effect Transistors With Integrated Gate-Protection Circuits for VHF TV Applications

DUAL-GATE MOSFET

DUAL-GATE MOSFET N-CHANNEL - - DEPLETION (TO-72) METAL

6367254 MOTOROLA SC (XSTRS/R F)

DUAL-GATE MOSFET N-CHANNEL - - DEPLETION

Electrical Specifications at 25oC

Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge

Discrete Semiconductors

Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge

Silicon Dual Insulated-Gate Field-Effect Transistors

Silicon Dual Insulated-Gate Field-Effect Transistors With Integrated Gate-Protection Circuits for VHF TV Applications

6367254 MOTOROLA SC (XSTRS/R F)

DUAL-GATE MOSFET N-CHANNEL - - DEPLETION

300mW Dual gate mosfet

This Dual gate mosfet diode is packaged in TO-72 package, which has a power dissipation of 300mW.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

DUAL-GATE MOSFET UHF COMMUNICATIONS

DUAL-GATE MOSFET UHF COMMUNICATIONS

N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS

N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level.

DUAL GATE MOSFET VHF AMPLIFIER

文件：1.37325 Mbytes Page：6 Pages

DUAL GATE MOSFET VHF AMPLIFIER

文件：1.37325 Mbytes Page：6 Pages

DUAL GATE MOSFET VHF AMPLIFIER

文件：1.37325 Mbytes Page：6 Pages

DUAL GATE MOSFET

文件：121.8 Kbytes Page：2 Pages

DUAL GATE MOSFET

文件：121.8 Kbytes Page：2 Pages

Trans MOSFET N-CH 25V 4-Pin TO-72

N-CHANNEL DUAL GATE MOS FIELD·EFFECT TRANSISTORS

文件：724.97 Kbytes Page：6 Pages

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use i

PowerMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intend

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Suppli

PowerMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Po

StarMOST Power MOSFET

文件：203.09 Kbytes Page：2 Pages