SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR

Silicon Dual Insulated-Gate Field-Effect Transistor With Integrated Gate-Protection Circuits For Military and Industrial Applications up to 500 MHz Applications ● RF amplifier, mixer, and IF amplifier in military and industrial communications equipment ● Aircraft and marine vehicular receiver

DUAL-GATE MOSFET

DUAL-GATE MOSFET N-CHANNEL - DEPLETION

TO-72

DUAL GATE MOSFET VHF AMPLIFIER

Discrete Semiconductors

Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge

Discrete Semiconductors

Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge

DUAL GATE MOSFET VHF AMPLIFIER

TO-72

TO-72

DUAL GATE MOSFET VHF AMPLIFIER

Discrete Semiconductors

Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge

Discrete Semiconductors

Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge

Discrete Semiconductors

Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge

6367254 MOTOROLA SC (XSTRS/R F)

DUAL-GATE MOSFET N-CHANNEL - - DEPLETION

DUAL-GATE MOSFET

DUAL-GATE MOSFET N-CHANNEL - - DEPLETION (TO-72) METAL

Silicon Dual Insulated-Gate Field-Effect Transistors

Silicon Dual Insulated-Gate Field-Effect Transistors With Integrated Gate-Protection Circuits for VHF TV Applications

Silicon Dual Insulated-Gate Field-Effect Transistors

Silicon Dual Insulated-Gate Field-Effect Transistors With Integrated Gate-Protection Circuits for VHF TV Applications

DUAL-GATE MOSFET

DUAL-GATE MOSFET N-CHANNEL - - DEPLETION (TO-72) METAL

6367254 MOTOROLA SC (XSTRS/R F)

DUAL-GATE MOSFET N-CHANNEL - - DEPLETION

Electrical Specifications at 25oC

Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge

Discrete Semiconductors

Discrets Semiconductors FETs For VHF Amplifiers and Mixers For Low Noise Amplifiers Low leakage/Noise Current Dual Gate Mosfets (N Channel Depletion) Low leakge

Silicon Dual Insulated-Gate Field-Effect Transistors

Silicon Dual Insulated-Gate Field-Effect Transistors With Integrated Gate-Protection Circuits for VHF TV Applications

6367254 MOTOROLA SC (XSTRS/R F)

DUAL-GATE MOSFET N-CHANNEL - - DEPLETION

N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS

N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level.

DUAL-GATE MOSFET UHF COMMUNICATIONS

DUAL-GATE MOSFET UHF COMMUNICATIONS

DUAL GATE MOSFET VHF AMPLIFIER

文件：1.37325 Mbytes Page：6 Pages

DUAL GATE MOSFET VHF AMPLIFIER

文件：1.37325 Mbytes Page：6 Pages

DUAL GATE MOSFET VHF AMPLIFIER

文件：1.37325 Mbytes Page：6 Pages

360mW Dual gate mosfet

DUAL GATE MOSFET

文件：121.8 Kbytes Page：2 Pages

DUAL GATE MOSFET

文件：121.8 Kbytes Page：2 Pages

N-CHANNEL DUAL GATE MOS FIELD·EFFECT TRANSISTORS

文件：724.97 Kbytes Page：6 Pages

Trans MOSFET N-CH 25V 4-Pin TO-72

300mW Dual gate mosfet

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use i

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

PowerMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intend

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Suppli