Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier

FEATURES • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance

P-CHANNEL DUAL MOSFET ENHANCEMENT MODE

FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF

DUAL P CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ● Very High Impedance ● High Gate Breakdown 3N190-3N191 ● Zener Protected Gate 3N188-3N189 ● Low Capacitance

DUAL MATCHED P-CHANNEL ENHANCEMENT MODE MOS FETS

FEATURES ● Very High Input Impedance ● Low Capacitance ● High Gate Breakdown 3N190-3N191 ● Zener Protectedgate 3N188-3N189 ● Vg & (TH) Matched ● Vg & (TH) Tracking

a monolithic dual enhancement mode P-Channel Mosfet

The 3N191 is a monolithic dual enhancement mode P-Channel Mosfet The 3N191 is a dual enhancement mode P-Channel Mosfet and is ideal for space constrained applications and those requiring tight electrical matching. The hermetically sealed TO-78 package is well suited for high reliability and hars

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

Dual P-Channel Enhancement Mode MOSFET

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P-CHANNEL DUAL MOSFET ENHANCEMENT MODE

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MOSFETS

a monolithic dual enhancement mode P-Channel Mosfet

The 3N191 is a monolithic dual enhancement mode P-Channel Mosfet The 3N191 is a dual enhancement mode P-Channel Mosfet and is ideal for space constrained applications and those requiring tight electrical matching. The hermetically sealed TO-78 package is well suited for high reliability and hars