位置：首页 > IC中文资料第6460页 > 3N166
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
3N166 | P-CHANNEL JFET GENERAL INFORMATION/CROSS REFERENCES | INTERSIL |   | |
3N166 | Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier FEATURES • Very High Impedance • High Gate Breakdown • Low Capacitance | CALOGIC | | |
3N166 | MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE | LINEAR | | |
3N166 | (SINGLE, DUAL) MOS FET P-CHANNEL, ENHANCEMENT MOS/FET/P-CHANNEL, ENHANCEMENT, SINGLE DUAL MOS/FET/P-CHANNEL, ENHANCEMENT | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
3N166 | MOSFETS | CALOGIC | | |
3N166 | a monolithic dual enhancement mode P-Channel Mosfet 文件：365.59 Kbytes Page：1 Pages | MICROSS | | |
3N166 | Monolithic Dual P-Channel 文件：37.65 Kbytes Page：2 Pages | CALOGIC | | |
a monolithic dual enhancement mode P-Channel Mosfet 文件：365.59 Kbytes Page：1 Pages | MICROSS | | ||
a monolithic dual enhancement mode P-Channel Mosfet 文件：365.69 Kbytes Page：1 Pages | MICROSS | |
3N166产品属性
- 类型
描述
- 型号
3N166
- 制造商
NJSEMI
- 制造商全称
New Jersey Semi-Conductor Products, Inc.
- 功能描述
(SINGLE, DUAL) MOS FET P-CHANNEL, ENHANCEMENT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CAL |
2023+ |
CAN6 |
50000 |
原装现货 |
|||
MOT |
2602+ |
CAN6 |
8985 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
INTERSIL |
24+ |
CAN6 |
100 |
原装现货假一罚十 |
|||
26+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
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DdatasheetPDF页码索引
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