位置：首页 > IC中文资料第6556页 > 3N165
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
3N165 | P-CHANNEL JFET GENERAL INFORMATION/CROSS REFERENCES | INTERSIL |   | |
3N165 | Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier FEATURES • Very High Impedance • High Gate Breakdown • Low Capacitance | CALOGIC | | |
3N165 | MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE | LINEAR | | |
3N165 | (SINGLE, DUAL) MOS FET P-CHANNEL, ENHANCEMENT MOS/FET/P-CHANNEL, ENHANCEMENT, SINGLE DUAL MOS/FET/P-CHANNEL, ENHANCEMENT | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
3N165 | a monolithic dual enhancement mode P-Channel Mosfet 文件：366.14 Kbytes Page：1 Pages | MICROSS | | |
MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE | LINEAR | | ||
Monolithic Dual P-Channel 文件：37.65 Kbytes Page：2 Pages | CALOGIC | | ||
a monolithic dual enhancement mode P-Channel Mosfet 文件：366.14 Kbytes Page：1 Pages | MICROSS | |
3N165产品属性
- 类型
描述
- 型号
3N165
- 制造商
MICROSS
- 制造商全称
MICROSS
- 功能描述
a monolithic dual enhancement mode P-Channel Mosfet
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
原厂正品 |
23+ |
SOP/DIP |
5000 |
原装正品,假一罚十 |
|||
MOT |
专业铁帽 |
CAN4 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
MOT |
24+ |
CAN6 |
8985 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
INTERSIL |
24+ |
CAN6 |
130 |
原装现货假一罚十 |
|||
CAL |
2023+ |
CAN6 |
50000 |
原装现货 |
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DdatasheetPDF页码索引
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