型号 功能描述 生产厂家 企业 LOGO 操作

P-CHANNEL ENHANCEMENT MODE

FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE

LINEAR

P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch

FEATURES • Very High Input Impedance • High Gate Breakdown • Fast Switching • Low Capacitance

CALOGIC

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

INTERSIL

(SINGLE, DUAL) MOS FET P-CHANNEL, ENHANCEMENT

MOS/FET/P-CHANNEL, ENHANCEMENT, SINGLE DUAL MOS/FET/P-CHANNEL, ENHANCEMENT

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

an enhancement mode P-Channel Mosfet

The 3N163 is an enhancement mode P-Channel Mosfet The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch 3N163 Features: ◾ Very high Input Impedance ◾ Low Capacitance ◾ High Gain ◾ High Gate Breakdown Voltage ◾ Low Threshold Voltage

MICROSS

更新时间:2026-3-11 20:00:01
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