位置:首页 > IC中文资料 > 3DD13002

型号 功能描述 生产厂家 企业 LOGO 操作
3DD13002

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 900 mW (Tamb=25℃) Collector current ICM: 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

JIANGSU

长电科技

3DD13002

0.8A, 600V NPN Plastic-Encapsulated Transistor

文件:297.11 Kbytes Page:2 Pages

SECOS

喜可士

3DD13002

TO-92 Plastic-Encapsulate Transistors

文件:2.26471 Mbytes Page:2 Pages

DGNJDZ

南晶电子

3DD13002

Plastic-Encapsulated Transistors

文件:56.56 Kbytes Page:1 Pages

TEL

3DD13002

TO-251 Plastic-Encapsulate Transistors

文件:51.18 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

3DD13002

TRANSISTOR(NPN)

文件:1.17685 Mbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

3DD13002

TRANSISTOR竊?NPN 竊

文件:877.28 Kbytes Page:3 Pages

JIANGSU

长电科技

3DD13002

TRANSISTOR竊?NPN 竊

文件:905.6 Kbytes Page:3 Pages

JIANGSU

长电科技

3DD13002

电子节能灯、镇流器专用开关晶体管

JSCJ

长晶科技

丝印代码:13002B;TO-92 Plastic-Encapsulate Transistors

FEATURE Power Switching Applications

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 900 mW (Tamb=25℃) Collector current ICM: 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

JIANGSU

长电科技

Switch Mode NPN Transistors

Switch Mode NPN Transistors P/b Lead(Pb)-Free

WEITRON

丝印代码:13002B;TO-92 Plastic-Encapsulate Transistors

FEATURE Power Switching Applications

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 900 mW (Tamb=25℃) Collector current ICM: 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

JIANGSU

长电科技

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:13002S;TO-92 Plastic-Encapsulate Transistors

FEATURES Power switching applications

DGNJDZ

南晶电子

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:13002S;TO-92 Plastic-Encapsulate Transistors

FEATURES Power switching applications

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 900 mW (Tamb=25℃) Collector current ICM: 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

JIANGSU

长电科技

NPN Transistors

文件:1.37512 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.37512 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.45349 Mbytes Page:2 Pages

KEXIN

科信电子

TO-92 Plastic-Encapsulate Transistors

文件:2.26471 Mbytes Page:2 Pages

DGNJDZ

南晶电子

NPN Transistors

文件:1.37512 Mbytes Page:2 Pages

KEXIN

科信电子

TRANSISTOR(NPN)

文件:1.57844 Mbytes Page:4 Pages

JIANGSU

长电科技

TRANSISTOR(NPN)

文件:1.57844 Mbytes Page:4 Pages

JIANGSU

长电科技

双极性晶体管

CRMICRO

华润微电子

双极性晶体管

CRMICRO

华润微电子

NPN Transistors

文件:1.45349 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.37512 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.45349 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.37512 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.45349 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.37512 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.45349 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.37512 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.45349 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.45349 Mbytes Page:2 Pages

KEXIN

科信电子

TRANSISTOR(NPN)

文件:2.28832 Mbytes Page:4 Pages

JIANGSU

长电科技

TRANSISTOR (NPN)

文件:408.01 Kbytes Page:3 Pages

JIANGSU

长电科技

High Voltage Fast Switching NPN Power Transistor

文件:157.72 Kbytes Page:3 Pages

BILIN

银河微电

TRANSISTOR竊?NPN 竊

文件:905.6 Kbytes Page:3 Pages

JIANGSU

长电科技

TRANSISTOR竊?NPN 竊

文件:877.28 Kbytes Page:3 Pages

JIANGSU

长电科技

3DD13002产品属性

  • 类型

    描述

  • IC(A):

    1

  • BVCBO(V):

    600

  • BVCEO(V):

    400

  • BVEBO(V):

    6

  • HFE(min):

    9

  • HFE(max):

    40

  • HFE@VCE(V):

    10

  • HFE@IC(mA):

    200

  • VCESAT(V):

    0.5

  • VCESAT@IC(mA):

    200

  • VCESAT@IB(mA):

    40

  • Package:

    TO-252-2L

更新时间:2026-5-17 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CHANGJIANG
25+
NA
880000
明嘉莱只做原装正品现货
长电
25+23+
TO-251
23665
绝对原装正品全新进口深圳现货
HUAJING
2025+
SOT-89S
5000
原装进口价格优 请找坤融电子!
长电/长晶
25+
TO-92
9000
只做原装正品 有挂有货 假一赔十
CJ/长电
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
CHANGJI
24+
TO-251
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
华晶
19+
TO-126
20000
原装现货假一罚十
华润华晶
2447
TO-126
315000
一级代理专营品牌!原装正品,优势现货,长期排单到货
长电
22+
TO-92
20000
公司只有原装 品质保证
CJ/长晶
24+
TO-92
360000
原装现货

3DD13002数据表相关新闻