型号 功能描述 生产厂家&企业 LOGO 操作
3DD13002

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 900 mW (Tamb=25℃) Collector current ICM: 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

JIANGSU

长电科技

3DD13002

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 900 mW (Tamb=25℃) Collector current ICM: 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

JIANGSU

长电科技

3DD13002

0.8A, 600V NPN Plastic-Encapsulated Transistor

文件:297.11 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

3DD13002

TO-92 Plastic-Encapsulate Transistors

文件:2.26471 Mbytes Page:2 Pages

DGNJDZ

南晶电子

3DD13002

Plastic-Encapsulated Transistors

文件:56.56 Kbytes Page:1 Pages

TEL

东电电子

3DD13002

TRANSISTOR竊?NPN 竊

文件:877.28 Kbytes Page:3 Pages

JIANGSU

长电科技

3DD13002

TO-251 Plastic-Encapsulate Transistors

文件:51.18 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

3DD13002

TRANSISTOR(NPN)

文件:1.17685 Mbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

3DD13002

TRANSISTOR竊?NPN 竊

文件:905.6 Kbytes Page:3 Pages

JIANGSU

长电科技

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 900 mW (Tamb=25℃) Collector current ICM: 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

JIANGSU

长电科技

Switch Mode NPN Transistors

Switch Mode NPN Transistors P/b Lead(Pb)-Free

WEITRON

TO-92 Plastic-Encapsulate Transistors

FEATURE Power Switching Applications

DGNJDZ

南晶电子

TO-92 Plastic-Encapsulate Transistors

FEATURE Power Switching Applications

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 900 mW (Tamb=25℃) Collector current ICM: 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

JIANGSU

长电科技

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

TO-92 Plastic-Encapsulate Transistors

FEATURES Power switching applications

DGNJDZ

南晶电子

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

TO-92 Plastic-Encapsulate Transistors

FEATURES Power switching applications

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 900 mW (Tamb=25℃) Collector current ICM: 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

JIANGSU

长电科技

NPN Transistors

文件:1.37512 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.37512 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.45349 Mbytes Page:2 Pages

KEXIN

科信电子

TO-92 Plastic-Encapsulate Transistors

文件:2.26471 Mbytes Page:2 Pages

DGNJDZ

南晶电子

NPN Transistors

文件:1.37512 Mbytes Page:2 Pages

KEXIN

科信电子

TRANSISTOR(NPN)

文件:1.57844 Mbytes Page:4 Pages

JIANGSU

长电科技

TRANSISTOR(NPN)

文件:1.57844 Mbytes Page:4 Pages

JIANGSU

长电科技

NPN Transistors

文件:1.45349 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.37512 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.45349 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.37512 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.45349 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.37512 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.45349 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.37512 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.45349 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.45349 Mbytes Page:2 Pages

KEXIN

科信电子

TRANSISTOR(NPN)

文件:2.28832 Mbytes Page:4 Pages

JIANGSU

长电科技

High Voltage Fast Switching NPN Power Transistor

文件:157.72 Kbytes Page:3 Pages

BILIN

银河微电

TRANSISTOR (NPN)

文件:408.01 Kbytes Page:3 Pages

JIANGSU

长电科技

TRANSISTOR竊?NPN 竊

文件:905.6 Kbytes Page:3 Pages

JIANGSU

长电科技

TRANSISTOR竊?NPN 竊

文件:877.28 Kbytes Page:3 Pages

JIANGSU

长电科技

3DD13002产品属性

  • 类型

    描述

  • 型号

    3DD13002

  • 功能描述

    (HAROM)TO-92 Plastic-Encapsulate Transistors

更新时间:2025-8-11 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CHANGJI
24+
TO-251
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
CJ/长晶
25+
TO251
54648
百分百原装现货 实单必成 欢迎询价
华润华晶
24+
NA/
11250
原装现货,当天可交货,原型号开票
HUAJING/华晶
25+
SOT-89S
20300
HUAJING/华晶原装特价3DD13002RUD即刻询购立享优惠#长期有货
CJ/长晶
24+
TO251
990000
明嘉莱只做原装正品现货
CJ江苏长电/长晶
2023+
TO-92(TO-92-3)
8700
原装现货
CJ/长晶
2511
TO-252-2L
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
CJ
2024
TO126
13500
16余年资质 绝对原盒原盘代理渠道 更多数量
CJ/长电
21+
TO-126
30000
百域芯优势 实单必成 可开13点增值税发票
长电
25+23+
TO-251
23665
绝对原装正品全新进口深圳现货

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