Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -30V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): -0.45V(Max) @IC= -2A APPLICATIONS · Designed for general-purpose switching and amplifier applications

isc Silicon PNP Power Transistors

文件：183.73 Kbytes Page：2 Pages

封装/外壳：径向 包装：散装 描述：LED AMBER DIFFUSED T-1 T/H 光电器件 LED 指示 - 分立

发光二极管/LED

STD PANEL MOUNT INDICATORS W/ WIRES

文件：487.61 Kbytes Page：4 Pages

SUBMINIATURE — SEALED

Features l Enclosed switch complying with IP 6K7 l Silicon-free version available l Models available for operating temperatures up to 120°C l Rated for currents up to 10 amp at 250VAC l Range of auxiliary actuators available (can also be retrofitted) l Various contact materials available,

SUBMINIATURE — SEALED

Features l Enclosed switch complying with IP 6K7 l Silicon-free version available l Models available for operating temperatures up to 120°C l Rated for currents up to 10 amp at 250VAC l Range of auxiliary actuators available (can also be retrofitted) l Various contact materials available,

STD PANEL MOUNT INDICATORS W/ WIRES

文件：487.61 Kbytes Page：4 Pages