包装：托盘 描述：PWR XFMR LAMINATED 237VA CHAS MT 变压器 电源变压器

包装：盒 描述：PWR XFMR LAMINATED 237VA CHAS MT 变压器 电源变压器

VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. FEATURES • High power gain • Easy power contr

SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)

HIGH SPEED SWITCHING. FEATURES • Low Forward Voltage : VF=0.24(Typ.) IF=5mA

SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)

HIGH SPEED SWITCHING. FEATURES • Low Forward Voltage : VF=0.24(Typ.) IF=5mA

High-Voltage, Fault-Protected Analog Multiplexers

General Description The MAX378 8-channel single-ended (1-of-8) multiplexer and the MAX379 4-channel differential (2-of-8) multiplexer use a series N-channel/P-channel/N-channel structure to provide significant fault protection. If the power supplies to the MAX378/MAX379 are inadvertently turned o

Silicon Complementary Transistors Power Amp Driver, Output, Switch

Description: The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type package designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Featur