丝印代码：361B；SURFACE MOUNT SILICON ZENER DIODES

FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Pb free product are available : 99 Sn

丝印代码：361B；5.0W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 5.0W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5 Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

丝印代码：361B；ZENER DIODE

Features · Glass Passivated Die Construction · 5.0W Power Dissipation · 3.3V – 200V Nominal Zener Voltage · 5 Standard Vz Tolerance · Low Inductance · For Use in Voltage Regulator or Reference · Plastic Case Material has UL Flammability Classification Rating 94V-0

丝印代码：361B；5.0W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 5.0W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5 Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

丝印代码：361B；These devices are particularly suited for low voltage applications in notebook computers,

Features VDS (V) = 30V RDS(ON)

丝印代码：361B；MOSFET

General Description These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Feature

丝印代码：361B；SILICON ZENER DIODES

Features Complete Voltage Range 3.3 to 200 Volts High peak reverse power dissipation High reliability Low leakage current Mechanical Data Case : SMB (DO-214AA) Molded plastic Epoxy : UL94V-O rate flame retardant Polarity : Color band denotes cathode end Mounting position : Any

丝印代码：361B；SILICON ZENER DIODES

Features Low leakage current High reliability High peak reverse power dissipation Complete Voltage Range 3.3 to 200 Volts

丝印代码：361B；Surface Mount Zener Diodes

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丝印代码：361B；Surface Mount Zener Diodes

文件：252.77 Kbytes Page：4 Pages

85째C Temperature Stable Ceramic Disc Capacitors

文件：28.02 Kbytes Page：2 Pages

Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz

Description: The NTE361 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: ● Specified 12.5 Volt, 470MHz Characteristics: Output Power = 2.0 Watts Minimum Gain = 8.0dB

High Speed Differential Comparators

文件：271.15 Kbytes Page：10 Pages

High Speed Differential Comparators

文件：271.15 Kbytes Page：10 Pages

High Speed Differential Comparators

文件：271.15 Kbytes Page：10 Pages

High Speed Differential Comparators

文件：271.15 Kbytes Page：10 Pages