丝印代码：3142MC12；Single-channel isolated gate driver IC

Features • Single-channel galvanically isolated coreless transformer based gate driver • Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 40

丝印代码：3142MU12；Single-channel isolated gate driver IC

Features • Single-channel galvanically isolated coreless transformer based gate driver • Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 40

丝印代码：3142MU12；EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)

Features • Single-channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 45 ns propagation delay with 7 ns part-to-part matching (skew) • 35 V absolute maximum output supply voltage • High common-mode

SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION

RATIOMETRIC, LINEAR HALL-EFFECT SENSORS FOR HIGH-TEMPERATURE OPERATION The A3515– and A3516– are sensitive, temperature-stable linear Hall effect sensors with greatly improved offset characteristics. Ratiometric, linear Hall-effect sensors provide a voltage output that is proportional to the appl

SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION

FEATURES and BENEFITS ■ Superior Temp. Stability for Automotive or Industrial Applications ■ 4.5 V to 24 V Operation … Needs Only An Unregulated Supply ■ Open-Collector 25 mA Output … Compatible with Digital Logic ■ Reverse Battery Protection ■ Activate with Small, Commercially Available Perm

SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION

RATIOMETRIC, LINEAR HALL-EFFECT SENSORS FOR HIGH-TEMPERATURE OPERATION The A3515– and A3516– are sensitive, temperature-stable linear Hall effect sensors with greatly improved offset characteristics. Ratiometric, linear Hall-effect sensors provide a voltage output that is proportional to the appl

Smart Lowside Power Switch

General Description N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Logic Level Input • Input Protection (ESD) • Thermal shutdown • Overload protection • Short circuit protection • Overvoltage protection • Current li

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