RF/Microwave GaN on SiC Power Devices, Pallets and Modules

The 3135GN-200V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 14.5 dB gain, 200 Watts of pulsed RF output power at 200uS pulse width, 10% duty factor across the 3100 – 3500 MHz band. This hermetically sealed transistor is designed for S-B