Type JX Thermocouple, 2 Pr #2022 Sol, PVC Ins Wht, Red, IS/OS, Blk PVC Jkt, 300V PLTC ITC CMG

Product Description Type JX Thermocouple, 2 Pair 20+22AWG (Solid) Iron+Constantan, PVC Insulation Wht, Red Color Code, Individual & Overall Beldfoil® Shield, Black PVC Outer Jacket, PLTC ITC CMG AWM 2464 SUN RES DIR BUR

Type JX Thermocouple, 2 Pr #2022 Sol, PVC Ins Wht, Red, IS/OS, Blk PVC Jkt, 300V PLTC ITC CMG

Product Description Type JX Thermocouple, 2 Pair 20+22AWG (Solid) Iron+Constantan, PVC Insulation Wht, Red Color Code, Individual & Overall Beldfoil® Shield, Black PVC Outer Jacket, PLTC ITC CMG AWM 2464 SUN RES DIR BUR

包装：线轴 描述：CBL 1PR/20AWG 2COND/22AWG 电缆，电线 多芯导线

NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=10KΩ)

Triple Video D/A Converters 3 x 10 bit, 150 Ms/s

Description FMS3110/3115 products are low-cost triple D/A converters. Features • 10-bit resolution • 150 megapixels per second • ± 0.1 linearity error • Sync and blank controls • 1.0V p-p video into 37.5Ω or 75Ω load • Internal bandgap voltage reference • Double-buffered data for low dist

Hybrid integrated circuits for inductive proximity detectors

DESCRIPTION The OM3105P is a hybrid integrated circuit intended for inductive proximity detectors in a tubular construction, especially the M5 hollow stud. The circuit performs a make function (version 1): when actuated, the current flows through the load, which can be for example a LED or an o

Hybrid integrated circuits for inductive proximity detectors

DESCRIPTION The OM3105P is a hybrid integrated circuit intended for inductive proximity detectors in a tubular construction, especially the M5 hollow stud. The circuit performs a make function (version 1): when actuated, the current flows through the load, which can be for example a LED or an o

FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components. FEATURES • Provides bias for GaAs and HEMT FETs • Drives up to three FET