Aerospace & Defense Speed Sensors

High Temperature VRS Sensor, 9,5 mm [0.375 in] M12 diameter, 15 Vp-p, -40 ºC to 205 ºC [-40 ºF to 400 ºF], 26 DP (module 0.98) or coarser, 50 kHz, 32 mm [1.25 in] approx. length.High Temperature VRS sensors are designed for use in applications where the sensor is exposed to temperatures up to 260 °C ·Self-powered operation \n·Direct conversion of actuator speed to output frequency \n·Simple installation \n·No moving parts \n·Designed for use over a wide range of speeds \n·Adaptable to a wide variety of configurations \n·Customized VRS products for unique speed sensing applications \n·Housing di;

封装/外壳：不锈钢套管 包装：盒 描述：VRS SPEED SENSOR 传感器，变送器 磁性传感器 - 位置，接近，速度（模块）

Aerospace & Defense Speed Sensors

High Temperature VRS Sensor, 9,5 mm [0.375 in] M12 diameter, 15 Vp-p, -40 ºC to 205 ºC [-40 ºF to 400 ºF], 26 DP (module 0.98) or coarser, 50 kHz, 50 mm [1.95 in] approx. length.High Temperature VRS sensors are designed for use in applications where the sensor is exposed to temperatures up to 260 °C ·Self-powered operation \n·Direct conversion of actuator speed to output frequency \n·Simple installation \n·No moving parts \n·Designed for use over a wide range of speeds \n·Adaptable to a wide variety of configurations \n·Customized VRS products for unique speed sensing applications \n·Housing di;

封装/外壳：不锈钢套管 包装：盒 描述：VRS SPEED SENSOR 传感器，变送器 磁性传感器 - 位置，接近，速度（模块）

Switching Application

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=10KΩ)

N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

SANKEN ELECTRIC COMPANY, LTD.

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